(111)/(100) interface in cubic materials

Sundar Ramamurthy; C. Barry Carter

(111)/(100) interface in cubic materials

Sundar Ramamurthy
, C. Barry Carter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Transmission electron microscopy has been employed to study the (111)/(100) interface in phase boundaries in oxides, semiconductor-heterojunctions, metal-ceramic interfaces, and grain boundaries. These interfaces were found in materials processed by various techniques which include sintering, thin film growth, and internal reduction methods. The interface plane cannot be ignored in any discussion of interface stability. In general, the descriptions based solely on matching of planes across the interface are not sufficient to explain the (111)/(100) orientation relationship.

Original language	English
Title of host publication	Proceedings - Annual Meeting, Microscopy Society of America
Pages	522-523
Number of pages	2
State	Published - Dec 1 1994
Externally published	Yes

Cite this

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title = "(111)/(100) interface in cubic materials",

abstract = "Transmission electron microscopy has been employed to study the (111)/(100) interface in phase boundaries in oxides, semiconductor-heterojunctions, metal-ceramic interfaces, and grain boundaries. These interfaces were found in materials processed by various techniques which include sintering, thin film growth, and internal reduction methods. The interface plane cannot be ignored in any discussion of interface stability. In general, the descriptions based solely on matching of planes across the interface are not sufficient to explain the (111)/(100) orientation relationship.",

author = "Sundar Ramamurthy and Carter, \{C. Barry\}",

year = "1994",

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AU - Ramamurthy, Sundar

AU - Carter, C. Barry

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Transmission electron microscopy has been employed to study the (111)/(100) interface in phase boundaries in oxides, semiconductor-heterojunctions, metal-ceramic interfaces, and grain boundaries. These interfaces were found in materials processed by various techniques which include sintering, thin film growth, and internal reduction methods. The interface plane cannot be ignored in any discussion of interface stability. In general, the descriptions based solely on matching of planes across the interface are not sufficient to explain the (111)/(100) orientation relationship.

AB - Transmission electron microscopy has been employed to study the (111)/(100) interface in phase boundaries in oxides, semiconductor-heterojunctions, metal-ceramic interfaces, and grain boundaries. These interfaces were found in materials processed by various techniques which include sintering, thin film growth, and internal reduction methods. The interface plane cannot be ignored in any discussion of interface stability. In general, the descriptions based solely on matching of planes across the interface are not sufficient to explain the (111)/(100) orientation relationship.

UR - https://www.scopus.com/pages/publications/0028737532

M3 - Conference contribution

SP - 522

EP - 523

BT - Proceedings - Annual Meeting, Microscopy Society of America

ER -

(111)/(100) interface in cubic materials

Abstract

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