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3 μm thick GaSb membrane diodes integrated with CVD diamond heat spreaders for thermally managed TPV cells

  • E. J. Renteria
  • , S. J. Addamane
  • , D. M. Shima
  • , C. P. Hains
  • , G. Balakrishnan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We demonstrate the integration of 3μm thick GaSb PN junctions with CVD diamond heat spreaders. The GaSb diodes are grown metamorphically on a GaAs substrate, bonded to CVD diamond by a solder process and isolated from the GaAs substrate by wet etching. Electrical characterization shows good diode behavior with a turn on voltage of 0.5 V and a reverse-bias leakage current of 1.12 mA.
Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
DOIs
StatePublished - Dec 14 2015
Externally publishedYes

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