Abstract
We demonstrate the integration of 3μm thick GaSb PN junctions with CVD diamond heat spreaders. The GaSb diodes are grown metamorphically on a GaAs substrate, bonded to CVD diamond by a solder process and isolated from the GaAs substrate by wet etching. Electrical characterization shows good diode behavior with a turn on voltage of 0.5 V and a reverse-bias leakage current of 1.12 mA.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
| DOIs | |
| State | Published - Dec 14 2015 |
| Externally published | Yes |
Fingerprint
Dive into the research topics of '3 μm thick GaSb membrane diodes integrated with CVD diamond heat spreaders for thermally managed TPV cells'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver