350-nm band edge-emitting laser diodes enabled by low-dislocation-density AlGaN templates

Mary H. Crawford; Andrew A. Allerman; Andrew M. Armstrong; Jonathan J. Wierer; Weng W. Chow; Michael W. Moseley; Michael L. Smith; Karen C. Cross

doi:10.1109/PHOSST.2015.7248224

350-nm band edge-emitting laser diodes enabled by low-dislocation-density AlGaN templates

Mary H. Crawford
, Andrew A. Allerman
, Andrew M. Armstrong
, Jonathan J. Wierer
, Weng W. Chow
, Michael W. Moseley
, Michael L. Smith
, Karen C. Cross

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Realization of efficient laser diodes with ultra-violet (UV) emission from ∼260-360 nm would enable many applications including fluorescence-based biological agent detection, sterilization, and portable water purification. While InGaN-based laser diodes are well developed down to ∼370 nm, achieving shorter UV wavelengths requires higher Al-content AlGaN alloys with increasing challenges in achieving p-type doping, strain-management, and low threading-dislocation-density (TDD) AlGaN templates. Given these challenges, few groups have reported AlGaN-based edge-emitting laser diodes (LDs) with emission < 355 nm.[1, 2] Most recently, random lasing via Anderson localization in AlGaN nanowire structures has demonstrated a novel approach to realizing deep-UV laser diodes.[3]

Original language	English
Title of host publication	2015 IEEE Summer Topicals Meeting Series, SUM 2015
Pages	121-122
Number of pages	2
DOIs	https://doi.org/10.1109/PHOSST.2015.7248224
State	Published - Sep 9 2015
Externally published	Yes

Access to Document

10.1109/PHOSST.2015.7248224

Cite this

@inproceedings{5f91ba8f561347aca23a023061091e23,

title = "350-nm band edge-emitting laser diodes enabled by low-dislocation-density AlGaN templates",

abstract = "Realization of efficient laser diodes with ultra-violet (UV) emission from ∼260-360 nm would enable many applications including fluorescence-based biological agent detection, sterilization, and portable water purification. While InGaN-based laser diodes are well developed down to ∼370 nm, achieving shorter UV wavelengths requires higher Al-content AlGaN alloys with increasing challenges in achieving p-type doping, strain-management, and low threading-dislocation-density (TDD) AlGaN templates. Given these challenges, few groups have reported AlGaN-based edge-emitting laser diodes (LDs) with emission < 355 nm.[1, 2] Most recently, random lasing via Anderson localization in AlGaN nanowire structures has demonstrated a novel approach to realizing deep-UV laser diodes.[3]",

author = "Crawford, \{Mary H.\} and Allerman, \{Andrew A.\} and Armstrong, \{Andrew M.\} and Wierer, \{Jonathan J.\} and Chow, \{Weng W.\} and Moseley, \{Michael W.\} and Smith, \{Michael L.\} and Cross, \{Karen C.\}",

year = "2015",

month = sep,

day = "9",

doi = "10.1109/PHOSST.2015.7248224",

language = "English",

isbn = "9781479974689",

pages = "121--122",

booktitle = "2015 IEEE Summer Topicals Meeting Series, SUM 2015",

}

TY - GEN

T1 - 350-nm band edge-emitting laser diodes enabled by low-dislocation-density AlGaN templates

AU - Crawford, Mary H.

AU - Allerman, Andrew A.

AU - Armstrong, Andrew M.

AU - Wierer, Jonathan J.

AU - Chow, Weng W.

AU - Moseley, Michael W.

AU - Smith, Michael L.

AU - Cross, Karen C.

PY - 2015/9/9

Y1 - 2015/9/9

N2 - Realization of efficient laser diodes with ultra-violet (UV) emission from ∼260-360 nm would enable many applications including fluorescence-based biological agent detection, sterilization, and portable water purification. While InGaN-based laser diodes are well developed down to ∼370 nm, achieving shorter UV wavelengths requires higher Al-content AlGaN alloys with increasing challenges in achieving p-type doping, strain-management, and low threading-dislocation-density (TDD) AlGaN templates. Given these challenges, few groups have reported AlGaN-based edge-emitting laser diodes (LDs) with emission < 355 nm.[1, 2] Most recently, random lasing via Anderson localization in AlGaN nanowire structures has demonstrated a novel approach to realizing deep-UV laser diodes.[3]

AB - Realization of efficient laser diodes with ultra-violet (UV) emission from ∼260-360 nm would enable many applications including fluorescence-based biological agent detection, sterilization, and portable water purification. While InGaN-based laser diodes are well developed down to ∼370 nm, achieving shorter UV wavelengths requires higher Al-content AlGaN alloys with increasing challenges in achieving p-type doping, strain-management, and low threading-dislocation-density (TDD) AlGaN templates. Given these challenges, few groups have reported AlGaN-based edge-emitting laser diodes (LDs) with emission < 355 nm.[1, 2] Most recently, random lasing via Anderson localization in AlGaN nanowire structures has demonstrated a novel approach to realizing deep-UV laser diodes.[3]

UR - https://www.scopus.com/pages/publications/84960473077

U2 - 10.1109/PHOSST.2015.7248224

DO - 10.1109/PHOSST.2015.7248224

M3 - Conference contribution

SN - 9781479974689

SP - 121

EP - 122

BT - 2015 IEEE Summer Topicals Meeting Series, SUM 2015

ER -

350-nm band edge-emitting laser diodes enabled by low-dislocation-density AlGaN templates

Abstract

Access to Document

Fingerprint

Cite this