A new iterative process for accurate analysis of displaced atoms from channeling Rutherford backscattering spectrometry

Lin Shao; Yongqiang Wang; M. Nastasi

doi:10.1016/j.nimb.2006.04.008

A new iterative process for accurate analysis of displaced atoms from channeling Rutherford backscattering spectrometry

Lin Shao
, Yongqiang Wang
, M. Nastasi

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have developed an iterative process to distinguish the yield contribution of the channeled He ions directly backscattered by displaced atoms and the yield contribution from the dechanneled He ions backscattered by lattice displaced atoms in channeling Rutherford backscattering spectrometry (RBS). The iterative process is able to accurately calculate the dechanneled fraction, the directly backscattered fraction and the dechanneling cross-section. It can also improve the accuracy of quantitative analysis of disorder profiles in monocrystalline solids by using channeling RBS. We demonstrate this technique by applying it to the measurement of the disorders in Si induced by 60 keV ¹H⁺ ion implantation to a fluence of 7 × 10¹⁶ cm^-2.

Original language	English
Pages (from-to)	250-252
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	249
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nimb.2006.04.008
State	Published - Aug 1 2006

Access to Document

10.1016/j.nimb.2006.04.008

Cite this

@article{fce7df463c154eca856e217b19ac2f77,

title = "A new iterative process for accurate analysis of displaced atoms from channeling Rutherford backscattering spectrometry",

abstract = "We have developed an iterative process to distinguish the yield contribution of the channeled He ions directly backscattered by displaced atoms and the yield contribution from the dechanneled He ions backscattered by lattice displaced atoms in channeling Rutherford backscattering spectrometry (RBS). The iterative process is able to accurately calculate the dechanneled fraction, the directly backscattered fraction and the dechanneling cross-section. It can also improve the accuracy of quantitative analysis of disorder profiles in monocrystalline solids by using channeling RBS. We demonstrate this technique by applying it to the measurement of the disorders in Si induced by 60 keV 1H+ ion implantation to a fluence of 7 {\texttimes} 1016 cm-2.",

author = "Lin Shao and Yongqiang Wang and M. Nastasi",

year = "2006",

month = aug,

day = "1",

doi = "10.1016/j.nimb.2006.04.008",

language = "English",

volume = "249",

pages = "250--252",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-2 SPEC. ISS.",

}

A new iterative process for accurate analysis of displaced atoms from channeling Rutherford backscattering spectrometry. / Shao, Lin; Wang, Yongqiang; Nastasi, M.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 249, No. 1-2 SPEC. ISS., 01.08.2006, p. 250-252.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A new iterative process for accurate analysis of displaced atoms from channeling Rutherford backscattering spectrometry

AU - Shao, Lin

AU - Wang, Yongqiang

AU - Nastasi, M.

PY - 2006/8/1

Y1 - 2006/8/1

N2 - We have developed an iterative process to distinguish the yield contribution of the channeled He ions directly backscattered by displaced atoms and the yield contribution from the dechanneled He ions backscattered by lattice displaced atoms in channeling Rutherford backscattering spectrometry (RBS). The iterative process is able to accurately calculate the dechanneled fraction, the directly backscattered fraction and the dechanneling cross-section. It can also improve the accuracy of quantitative analysis of disorder profiles in monocrystalline solids by using channeling RBS. We demonstrate this technique by applying it to the measurement of the disorders in Si induced by 60 keV 1H+ ion implantation to a fluence of 7 × 1016 cm-2.

AB - We have developed an iterative process to distinguish the yield contribution of the channeled He ions directly backscattered by displaced atoms and the yield contribution from the dechanneled He ions backscattered by lattice displaced atoms in channeling Rutherford backscattering spectrometry (RBS). The iterative process is able to accurately calculate the dechanneled fraction, the directly backscattered fraction and the dechanneling cross-section. It can also improve the accuracy of quantitative analysis of disorder profiles in monocrystalline solids by using channeling RBS. We demonstrate this technique by applying it to the measurement of the disorders in Si induced by 60 keV 1H+ ion implantation to a fluence of 7 × 1016 cm-2.

UR - https://www.scopus.com/pages/publications/33745841341

U2 - 10.1016/j.nimb.2006.04.008

DO - 10.1016/j.nimb.2006.04.008

M3 - Article

SN - 0168-583X

VL - 249

SP - 250

EP - 252

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2 SPEC. ISS.

ER -

A new iterative process for accurate analysis of displaced atoms from channeling Rutherford backscattering spectrometry

Abstract

Access to Document

Fingerprint

Cite this