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A study of inner process double-resonance Raman scattering in bilayer graphene

  • D. L. Mafra
  • , E. A. Moujaes
  • , S. K. Doorn
  • , H. Htoon
  • , R. W. Nunes
  • , M. A. Pimenta

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

The dispersion of phonons and the electronic structure of graphene systems can be obtained experimentally from the double-resonance (DR) Raman features by varying the excitation laser energy. In a previous resonance Raman investigation of graphene, the electronic structure was analyzed in the framework of the Slonczewski-Weiss-McClure (SWM) model, considering the outer DR process. We analyze the data considering the inner DR process, and obtain SWM parameters that are in better agreement with those obtained from other experimental techniques.

Original languageEnglish
Pages (from-to)1511-1515
Number of pages5
JournalCarbon
Volume49
Issue number5
DOIs
StatePublished - Apr 1 2011

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