A technique to measure stopping power difference between channeled and non-channeled ions in crystalline solids

For high accuracy in energy-depth conversion in channeling Rutherford backscattering spectrometry (RBS) analysis, the precise knowledge of the channeling stopping powers of helium ions in crystalline solids is demanded. Here, we propose a novel approach to measure the stopping power difference between channeled and random He ions in silicon. In this technique, energies of incident He ions are adjusted such that the detector measured energies of ions which are backscattered from a buried maker in silicon are the same for the channeled and random incident ions. Therefore, the amount of energy adjustments for the incident beams represents the difference in energy loss between channeled and random ions in their inward paths. The technique avoids the use of a self-standing thin film which is normally required in stopping power measurements.