A technique to study the lattice location of hydrogen atoms in silicon by channeling elastic recoil detection analysis

By combining elastic recoil detection analysis with the channeling technique, energy analysis of forward-scattered H1 permits determination of the H1 lattice location. We have used this technique to study the lattice location of hydrogen in a crystalline Si containing a buried boron-doped layer. We showed that hydrogen atoms are trapped at the boron-doped Si layer after hydrogenation and that the majority of the trapped hydrogen atoms are located near bond-center sites.