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Acoustoelectric Surface Acoustic Wave Switch in An Epitaxial Ingaas on Lithium Niobate Heterostructure

  • Matthew J. Storey
  • , Lisa Hackett
  • , Sara Digregorio
  • , Michael Miller
  • , Greg Peake
  • , Matt Eichenfield
  • , Dana Weinstein

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

This work presents a 3-Port acoustoelectric switch design for surface acoustic wave signal processing. Using a multistrip coupler, the input acoustic wave at Port 1 is split into two parallel and electrically cross-linked acoustoelectric delay lines where an applied voltage can alter the gain and attenuation in each delay line based on the voltage polarity. The switch is demonstrated using a 270 MHz Leaky SAW mode on an InGaAs on 41° Y-cut lithium niobate heterostructure. Applying a +40 V voltage pulse results in an IL of -12.5 dB and -57.5 dB in the gain and isolation switch paths, respectively. This leads to a 45 dB difference in signal strength at the output ports.
Original languageEnglish
Title of host publication21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
Pages545-548
Number of pages4
DOIs
StatePublished - Jun 20 2021
Externally publishedYes

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