Abstract
We demonstrate electrically-controlled active tuning of mid-infrared metamaterial resonances using depletion-type devices. The depletion width in an n-doped GaAs epilayer changes with an electric bias, inducing a change of the permittivity of the substrate and leading to frequency tuning of the resonance. We first present our detailed theoretical analysis and then explain experimental data of bias-dependent metamaterial transmission spectra. This electrical tuning is generally applicable to a variety of infrared metamaterials and plasmonic structures, which can find novel applications in chip-scale active infrared devices. © 2012 Optical Society of America.
| Original language | English |
|---|---|
| Pages (from-to) | 1903-1911 |
| Number of pages | 9 |
| Journal | Optics Express |
| Volume | 20 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jan 16 2012 |
| Externally published | Yes |
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