Abstract
During the past two years significant performance advances have been achieved in selectively oxidized vertical-cavity surface emitting lasers (VCSELs), many of which have established overall benchmark records for semiconductor lasers. These oxidized VCSEL structures leverage the high oxidation selectivity of Al(Ga)As and the capability of forming buried oxide layers within the epilayers of the laser. This paper reviews the advances made in device fabrication, structure and performance of selectively oxidized VCSELs.
| Original language | English |
|---|---|
| Title of host publication | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Pages | 203-204 |
| Number of pages | 2 |
| State | Published - Jan 1 1996 |
| Externally published | Yes |
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