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Advances in oxide-confined vertical cavity lasers

  • Kent D. Choquette
  • , R. P. Schneider
  • , K. L. Lear
  • , K. M. Geib
  • , H. Q. Hou
  • , H. C. Chui
  • , M. Hagerott Crawford
  • , W. W. Chow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

During the past two years significant performance advances have been achieved in selectively oxidized vertical-cavity surface emitting lasers (VCSELs), many of which have established overall benchmark records for semiconductor lasers. These oxidized VCSEL structures leverage the high oxidation selectivity of Al(Ga)As and the capability of forming buried oxide layers within the epilayers of the laser. This paper reviews the advances made in device fabrication, structure and performance of selectively oxidized VCSELs.
Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages203-204
Number of pages2
StatePublished - Jan 1 1996
Externally publishedYes

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