Al- ga as/gaas superlattice disordering by ion-implantation and diffusion: X x a tem study ofmechanisms

B. C. De Cooman; C. B. Carter; J. R. Ralston

doi:10.1117/12.941041

Al- ga as/gaas superlattice disordering by ion-implantation and diffusion: X x a tem study ofmechanisms

B. C. De Cooman
, C. B. Carter
, J. R. Ralston

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

The disordering of All-xGaxAs/GaAs superlattices by ion-implantation has been studied by cross-sectional electron microscopy. It has been found that the superlattice intermixing is extensive only when accompanied by superlattice amorphization or impurity diffusion. Stacking-fault tetrahedra, interstitial dislocation loops and microtwins are the main types of defects observed after implantation and annealing. The defects are stratified and interact with the periodic strain-field of the superlattice. © 1987 SPIE.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Pages	185-193
Number of pages	9
Volume	797
DOIs	https://doi.org/10.1117/12.941041
State	Published - Apr 22 1987
Externally published	Yes

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title = "Al- ga as/gaas superlattice disordering by ion-implantation and diffusion: X x a tem study ofmechanisms",

abstract = "The disordering of All-xGaxAs/GaAs superlattices by ion-implantation has been studied by cross-sectional electron microscopy. It has been found that the superlattice intermixing is extensive only when accompanied by superlattice amorphization or impurity diffusion. Stacking-fault tetrahedra, interstitial dislocation loops and microtwins are the main types of defects observed after implantation and annealing. The defects are stratified and interact with the periodic strain-field of the superlattice. {\textcopyright} 1987 SPIE.",

author = "\{De Cooman\}, \{B. C.\} and Carter, \{C. B.\} and Ralston, \{J. R.\}",

year = "1987",

month = apr,

day = "22",

doi = "10.1117/12.941041",

language = "English",

volume = "797",

pages = "185--193",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

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T1 - Al- ga as/gaas superlattice disordering by ion-implantation and diffusion: X x a tem study ofmechanisms

AU - De Cooman, B. C.

AU - Carter, C. B.

AU - Ralston, J. R.

PY - 1987/4/22

Y1 - 1987/4/22

N2 - The disordering of All-xGaxAs/GaAs superlattices by ion-implantation has been studied by cross-sectional electron microscopy. It has been found that the superlattice intermixing is extensive only when accompanied by superlattice amorphization or impurity diffusion. Stacking-fault tetrahedra, interstitial dislocation loops and microtwins are the main types of defects observed after implantation and annealing. The defects are stratified and interact with the periodic strain-field of the superlattice. © 1987 SPIE.

AB - The disordering of All-xGaxAs/GaAs superlattices by ion-implantation has been studied by cross-sectional electron microscopy. It has been found that the superlattice intermixing is extensive only when accompanied by superlattice amorphization or impurity diffusion. Stacking-fault tetrahedra, interstitial dislocation loops and microtwins are the main types of defects observed after implantation and annealing. The defects are stratified and interact with the periodic strain-field of the superlattice. © 1987 SPIE.

UR - https://www.scopus.com/pages/publications/0023561226

U2 - 10.1117/12.941041

DO - 10.1117/12.941041

M3 - Conference contribution

VL - 797

SP - 185

EP - 193

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Al- ga as/gaas superlattice disordering by ion-implantation and diffusion: X x a tem study ofmechanisms

Abstract

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