Abstract
We overview the materials challenges and device performance of deep ultraviolet-emitting AlGaN-based LEDs. Recent advances include milliwatt-level performance at 275-300 nm and the demonstration of electroluminescence at 254 nm and 237 nm.
| Original language | English |
|---|---|
| Title of host publication | Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest |
| Pages | 344-345 |
| Number of pages | 2 |
| Volume | 2005 |
| DOIs | |
| State | Published - Dec 1 2005 |
| Externally published | Yes |
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