All-electrical universal control of a double quantum dot qubit in silicon MOS

Patrick Harvey-Collard; Ryan M. Jock; N. Tobias Jacobson; Andrew D. Baczewski; Andrew M. Mounce; Matthew J. Curry; Daniel R. Ward; John M. Anderson; Ronald P. Manginell; Joel R. Wendt; Martin Rudolph; Tammy Pluym; Michael P. Lilly; Michel Pioro-Ladrière; Malcolm S. Carroll

doi:10.1109/IEDM.2017.8268507

All-electrical universal control of a double quantum dot qubit in silicon MOS

Patrick Harvey-Collard
, Ryan M. Jock
, N. Tobias Jacobson
, Andrew D. Baczewski
, Andrew M. Mounce
, Matthew J. Curry
, Daniel R. Ward
, John M. Anderson
, Ronald P. Manginell
, Joel R. Wendt
, Martin Rudolph
, Tammy Pluym
, Michael P. Lilly
, Michel Pioro-Ladrière
, Malcolm S. Carroll

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.

Original language	English
Title of host publication	Technical Digest - International Electron Devices Meeting, IEDM
Pages	36.5.1-36.5.4
Number of pages	36
DOIs	https://doi.org/10.1109/IEDM.2017.8268507
State	Published - Jan 23 2018
Externally published	Yes

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Harvey-Collard, P., Jock, R. M., Jacobson, N. T., Baczewski, A. D., Mounce, A. M., Curry, M. J., Ward, D. R., Anderson, J. M., Manginell, R. P., Wendt, J. R., Rudolph, M., Pluym, T., Lilly, M. P., Pioro-Ladrière, M., & Carroll, M. S. (2018). All-electrical universal control of a double quantum dot qubit in silicon MOS. In Technical Digest - International Electron Devices Meeting, IEDM (pp. 36.5.1-36.5.4) https://doi.org/10.1109/IEDM.2017.8268507

@inproceedings{4dff30c2fbce437683952597bae6de60,

title = "All-electrical universal control of a double quantum dot qubit in silicon MOS",

abstract = "Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.",

author = "Patrick Harvey-Collard and Jock, \{Ryan M.\} and Jacobson, \{N. Tobias\} and Baczewski, \{Andrew D.\} and Mounce, \{Andrew M.\} and Curry, \{Matthew J.\} and Ward, \{Daniel R.\} and Anderson, \{John M.\} and Manginell, \{Ronald P.\} and Wendt, \{Joel R.\} and Martin Rudolph and Tammy Pluym and Lilly, \{Michael P.\} and Michel Pioro-Ladri{\`e}re and Carroll, \{Malcolm S.\}",

year = "2018",

month = jan,

day = "23",

doi = "10.1109/IEDM.2017.8268507",

language = "English",

isbn = "9781538635599",

pages = "36.5.1--36.5.4",

booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",

}

Harvey-Collard, P, Jock, RM, Jacobson, NT, Baczewski, AD, Mounce, AM, Curry, MJ, Ward, DR, Anderson, JM, Manginell, RP, Wendt, JR, Rudolph, M, Pluym, T, Lilly, MP, Pioro-Ladrière, M & Carroll, MS 2018, All-electrical universal control of a double quantum dot qubit in silicon MOS. in Technical Digest - International Electron Devices Meeting, IEDM. pp. 36.5.1-36.5.4. https://doi.org/10.1109/IEDM.2017.8268507

TY - GEN

T1 - All-electrical universal control of a double quantum dot qubit in silicon MOS

AU - Harvey-Collard, Patrick

AU - Jock, Ryan M.

AU - Jacobson, N. Tobias

AU - Baczewski, Andrew D.

AU - Mounce, Andrew M.

AU - Curry, Matthew J.

AU - Ward, Daniel R.

AU - Anderson, John M.

AU - Manginell, Ronald P.

AU - Wendt, Joel R.

AU - Rudolph, Martin

AU - Pluym, Tammy

AU - Lilly, Michael P.

AU - Pioro-Ladrière, Michel

AU - Carroll, Malcolm S.

PY - 2018/1/23

Y1 - 2018/1/23

N2 - Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.

AB - Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.

UR - https://www.scopus.com/pages/publications/85045219662

U2 - 10.1109/IEDM.2017.8268507

DO - 10.1109/IEDM.2017.8268507

M3 - Conference contribution

SN - 9781538635599

SP - 36.5.1-36.5.4

BT - Technical Digest - International Electron Devices Meeting, IEDM

ER -

All-electrical universal control of a double quantum dot qubit in silicon MOS

Abstract

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