All-optical lithography process for contacting nanometer precision donor devices

D. R. Ward; M. T. Marshall; D. M. Campbell; T. M. Lu; J. C. Koepke; D. A. Scrymgeour; E. Bussmann; S. Misra

doi:10.1063/1.4998639

All-optical lithography process for contacting nanometer precision donor devices

D. R. Ward
, M. T. Marshall
, D. M. Campbell
, T. M. Lu
, J. C. Koepke
, D. A. Scrymgeour
, E. Bussmann
, S. Misra

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

Original language	English
Journal	Applied Physics Letters
Volume	111
Issue number	19
DOIs	https://doi.org/10.1063/1.4998639
State	Published - Nov 6 2017
Externally published	Yes

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10.1063/1.4998639

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title = "All-optical lithography process for contacting nanometer precision donor devices",

abstract = "We describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.",

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AU - Ward, D. R.

AU - Marshall, M. T.

AU - Campbell, D. M.

AU - Lu, T. M.

AU - Koepke, J. C.

AU - Scrymgeour, D. A.

AU - Bussmann, E.

AU - Misra, S.

PY - 2017/11/6

Y1 - 2017/11/6

N2 - We describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

AB - We describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

UR - https://www.scopus.com/pages/publications/85033579684

U2 - 10.1063/1.4998639

DO - 10.1063/1.4998639

M3 - Article

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

All-optical lithography process for contacting nanometer precision donor devices

Abstract

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