AlN films grown by electric field induced flux of Al cations

Matthew T. Johnson; C. Barry Carter

doi:10.1016/S0040-6090(98)01162-6

AlN films grown by electric field induced flux of Al cations

Matthew T. Johnson
, C. Barry Carter

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Thin films of aluminum nitride (AlN) have been grown on (0001) oriented sapphire (α-Al2O3) substrates through the use of an externally applied electric field. By applying an electric field with an appropriate electrode material, at elevated temperatures, across Al2O3, a flux of Al3+ cations toward the cathode was induced. The cations arriving at the surface of the Al2O3 then reacted with a nitrogen gas atmosphere to form a thin epitactic film of AlN on the Al2O3. © 1999 Elsevier Science S.A. All rights reserved.

Original language	English
Pages (from-to)	117-119
Number of pages	3
Journal	Thin Solid Films
Volume	339
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)01162-6
State	Published - Jan 1 1999
Externally published	Yes

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title = "AlN films grown by electric field induced flux of Al cations",

abstract = "Thin films of aluminum nitride (AlN) have been grown on (0001) oriented sapphire (α-Al2O3) substrates through the use of an externally applied electric field. By applying an electric field with an appropriate electrode material, at elevated temperatures, across Al2O3, a flux of Al3+ cations toward the cathode was induced. The cations arriving at the surface of the Al2O3 then reacted with a nitrogen gas atmosphere to form a thin epitactic film of AlN on the Al2O3. {\textcopyright} 1999 Elsevier Science S.A. All rights reserved.",

author = "Johnson, \{Matthew T.\} and Carter, \{C. Barry\}",

year = "1999",

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doi = "10.1016/S0040-6090(98)01162-6",

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T1 - AlN films grown by electric field induced flux of Al cations

AU - Johnson, Matthew T.

AU - Carter, C. Barry

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N2 - Thin films of aluminum nitride (AlN) have been grown on (0001) oriented sapphire (α-Al2O3) substrates through the use of an externally applied electric field. By applying an electric field with an appropriate electrode material, at elevated temperatures, across Al2O3, a flux of Al3+ cations toward the cathode was induced. The cations arriving at the surface of the Al2O3 then reacted with a nitrogen gas atmosphere to form a thin epitactic film of AlN on the Al2O3. © 1999 Elsevier Science S.A. All rights reserved.

AB - Thin films of aluminum nitride (AlN) have been grown on (0001) oriented sapphire (α-Al2O3) substrates through the use of an externally applied electric field. By applying an electric field with an appropriate electrode material, at elevated temperatures, across Al2O3, a flux of Al3+ cations toward the cathode was induced. The cations arriving at the surface of the Al2O3 then reacted with a nitrogen gas atmosphere to form a thin epitactic film of AlN on the Al2O3. © 1999 Elsevier Science S.A. All rights reserved.

UR - https://www.scopus.com/pages/publications/0033534970

U2 - 10.1016/S0040-6090(98)01162-6

DO - 10.1016/S0040-6090(98)01162-6

M3 - Article

SN - 0040-6090

VL - 339

SP - 117

EP - 119

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

AlN films grown by electric field induced flux of Al cations

Abstract

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