Skip to main navigation Skip to search Skip to main content

Amplified spontaneous emission effects in bulk and quantum well semiconductor laser amplifiers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We investigated the effects of increasing excitation on the performance of semiconductor laser amplifiers. Amplified spontaneous emission (ASE) is a limitation to the power scaling of these devices. A Rigrod analysis is used to study the effects of ASE on the gain, signal-to-noise ratio and efficiency for different values of injection current, facet reflectivity and input laser intensity. Comparisons are made between bulk and quantum well gain media.
Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Pages158-173
Number of pages16
Volume1216
DOIs
StatePublished - Jan 1 1990
Externally publishedYes

Fingerprint

Dive into the research topics of 'Amplified spontaneous emission effects in bulk and quantum well semiconductor laser amplifiers'. Together they form a unique fingerprint.

Cite this