Amplified Spontaneous Emission Effects in Semiconductor Laser Amplifiers

Weng W. Chow; Richard R. Craig

doi:10.1109/3.59683

Amplified Spontaneous Emission Effects in Semiconductor Laser Amplifiers

Weng W. Chow
, Richard R. Craig

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We investigate the effects of amplified spontaneous emission on the power scaling of semiconductor laser amplifiers. A Rigrod analysis is used to determine the dependence of gain, signal-to-noise ratio, and efficiency on injection current, facet reflectivities, and input laser intensity. © 1990 IEEE

Original language	English
Pages (from-to)	1363-1368
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	26
Issue number	8
DOIs	https://doi.org/10.1109/3.59683
State	Published - Jan 1 1990
Externally published	Yes

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title = "Amplified Spontaneous Emission Effects in Semiconductor Laser Amplifiers",

abstract = "We investigate the effects of amplified spontaneous emission on the power scaling of semiconductor laser amplifiers. A Rigrod analysis is used to determine the dependence of gain, signal-to-noise ratio, and efficiency on injection current, facet reflectivities, and input laser intensity. {\textcopyright} 1990 IEEE",

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AB - We investigate the effects of amplified spontaneous emission on the power scaling of semiconductor laser amplifiers. A Rigrod analysis is used to determine the dependence of gain, signal-to-noise ratio, and efficiency on injection current, facet reflectivities, and input laser intensity. © 1990 IEEE

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SP - 1363

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JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

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ER -

Amplified Spontaneous Emission Effects in Semiconductor Laser Amplifiers

Abstract

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