An annular Si drift detector μPIXE system using AXSIA analysis

B. L. Doyle; D. S. Walsh; P. G. Kotula; P. Rossi; T. Schülein; M. Rohde

doi:10.1002/xrs.840

An annular Si drift detector μPIXE system using AXSIA analysis

B. L. Doyle
, D. S. Walsh
, P. G. Kotula
, P. Rossi
, T. Schülein
, M. Rohde

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

22 Scopus citations

Abstract

Sandia and Rontec have developed an annular, 12-element, 60 mm2, Peltier-cooled, translatable, silicon drift detector called the SDD-12. The body of the SDD-12 is only 22.8 mm in total thickness and easily fits between the sample and the upstream wall of the Sandia microbeam chamber. At a working distance of 1 mm, the solid angle is 1.09 sr. The energy resolution is 170 eV at count rates <40 kcps and 200 eV for rates of 1 Mcps. X-ray count rates must be maintained below 50 kcps when protons are allowed to strike the full area of the SDD. Another innovation with this new μPIXE system is that the data are analyzed using Sandia's Automated eXpert Spectral Image Analysis (AXSIA). Copyright © 2005 John Wiley & Sons, Ltd.

Original language	English
Title of host publication	X-Ray Spectrometry
Pages	279-284
Number of pages	6
Volume	34
Edition	4
DOIs	https://doi.org/10.1002/xrs.840
State	Published - Jan 1 2005
Externally published	Yes

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title = "An annular Si drift detector μPIXE system using AXSIA analysis",

abstract = "Sandia and Rontec have developed an annular, 12-element, 60 mm2, Peltier-cooled, translatable, silicon drift detector called the SDD-12. The body of the SDD-12 is only 22.8 mm in total thickness and easily fits between the sample and the upstream wall of the Sandia microbeam chamber. At a working distance of 1 mm, the solid angle is 1.09 sr. The energy resolution is 170 eV at count rates <40 kcps and 200 eV for rates of 1 Mcps. X-ray count rates must be maintained below 50 kcps when protons are allowed to strike the full area of the SDD. Another innovation with this new μPIXE system is that the data are analyzed using Sandia's Automated eXpert Spectral Image Analysis (AXSIA). Copyright {\textcopyright} 2005 John Wiley \& Sons, Ltd.",

author = "Doyle, \{B. L.\} and Walsh, \{D. S.\} and Kotula, \{P. G.\} and P. Rossi and T. Sch{\"u}lein and M. Rohde",

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AU - Doyle, B. L.

AU - Walsh, D. S.

AU - Kotula, P. G.

AU - Rossi, P.

AU - Schülein, T.

AU - Rohde, M.

PY - 2005/1/1

Y1 - 2005/1/1

N2 - Sandia and Rontec have developed an annular, 12-element, 60 mm2, Peltier-cooled, translatable, silicon drift detector called the SDD-12. The body of the SDD-12 is only 22.8 mm in total thickness and easily fits between the sample and the upstream wall of the Sandia microbeam chamber. At a working distance of 1 mm, the solid angle is 1.09 sr. The energy resolution is 170 eV at count rates <40 kcps and 200 eV for rates of 1 Mcps. X-ray count rates must be maintained below 50 kcps when protons are allowed to strike the full area of the SDD. Another innovation with this new μPIXE system is that the data are analyzed using Sandia's Automated eXpert Spectral Image Analysis (AXSIA). Copyright © 2005 John Wiley & Sons, Ltd.

AB - Sandia and Rontec have developed an annular, 12-element, 60 mm2, Peltier-cooled, translatable, silicon drift detector called the SDD-12. The body of the SDD-12 is only 22.8 mm in total thickness and easily fits between the sample and the upstream wall of the Sandia microbeam chamber. At a working distance of 1 mm, the solid angle is 1.09 sr. The energy resolution is 170 eV at count rates <40 kcps and 200 eV for rates of 1 Mcps. X-ray count rates must be maintained below 50 kcps when protons are allowed to strike the full area of the SDD. Another innovation with this new μPIXE system is that the data are analyzed using Sandia's Automated eXpert Spectral Image Analysis (AXSIA). Copyright © 2005 John Wiley & Sons, Ltd.

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U2 - 10.1002/xrs.840

DO - 10.1002/xrs.840

M3 - Conference contribution

VL - 34

SP - 279

EP - 284

BT - X-Ray Spectrometry

ER -

An annular Si drift detector μPIXE system using AXSIA analysis

Abstract

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