Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier; A. Thränhardt; T. Meier; H. Grüning; P. J. Klar; W. Heimbrodt; S. W. Koch; W. W. Chow; J. Hader; J. V. Moloney

Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier
, A. Thränhardt
, T. Meier
, H. Grüning
, P. J. Klar
, W. Heimbrodt
, S. W. Koch
, W. W. Chow
, J. Hader
, J. V. Moloney

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In 0.23Ga 0.77As/GaN xAs 1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range. © 2004 Optical Society of America.

Original language	English
Title of host publication	Quantum Electronics and Laser Science Conference (QELS)
Pages	1053-1055
Number of pages	3
Volume	2
State	Published - Oct 31 2005
Externally published	Yes

Cite this

@inproceedings{1542864eb10e44a3a0423372fcf21cf2,

title = "Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range",

abstract = "Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In 0.23Ga 0.77As/GaN xAs 1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range. {\textcopyright} 2004 Optical Society of America.",

author = "C. Schlichenmaier and A. Thr{\"a}nhardt and T. Meier and H. Gr{\"u}ning and Klar, \{P. J.\} and W. Heimbrodt and Koch, \{S. W.\} and Chow, \{W. W.\} and J. Hader and Moloney, \{J. V.\}",

year = "2005",

month = oct,

day = "31",

language = "English",

isbn = "1557527962",

volume = "2",

pages = "1053--1055",

booktitle = "Quantum Electronics and Laser Science Conference (QELS)",

}

TY - GEN

T1 - Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

AU - Schlichenmaier, C.

AU - Thränhardt, A.

AU - Meier, T.

AU - Grüning, H.

AU - Klar, P. J.

AU - Heimbrodt, W.

AU - Koch, S. W.

AU - Chow, W. W.

AU - Hader, J.

AU - Moloney, J. V.

PY - 2005/10/31

Y1 - 2005/10/31

N2 - Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In 0.23Ga 0.77As/GaN xAs 1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range. © 2004 Optical Society of America.

AB - Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In 0.23Ga 0.77As/GaN xAs 1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range. © 2004 Optical Society of America.

UR - https://www.scopus.com/pages/publications/27144545083

M3 - Conference contribution

SN - 1557527962

SN - 9781557527967

VL - 2

SP - 1053

EP - 1055

BT - Quantum Electronics and Laser Science Conference (QELS)

ER -

Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

Abstract

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