Anomalous carrier-induced dispersion in semiconductor quantum dots

H. C. Schneider; W. W. Chow; P. M. Smowton; E. J. Pearce; S. W. Koch

doi:10.1364/OPN.13.12.000050

Anomalous carrier-induced dispersion in semiconductor quantum dots

H. C. Schneider
, W. W. Chow
, P. M. Smowton
, E. J. Pearce
, S. W. Koch

Research output: Other contribution › peer-review

1 Scopus citations

Abstract

The anomalous carrier-induced dispersion in semiconductor quantum dots was studied. The experiment was performed using quantum-dot lasers consisting of InGaAs quantum dots embedded in GaAs quantum well layers. The experimental result was found to be consistent with a negative linewidth enhancement factor and showed that the anomaly in the dispersive behavior of a quantum dot structure eliminated the longstanding beam-filamentation problem.

Original language	English
DOIs	https://doi.org/10.1364/OPN.13.12.000050
State	Published - Jan 1 2002
Externally published	Yes

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title = "Anomalous carrier-induced dispersion in semiconductor quantum dots",

abstract = "The anomalous carrier-induced dispersion in semiconductor quantum dots was studied. The experiment was performed using quantum-dot lasers consisting of InGaAs quantum dots embedded in GaAs quantum well layers. The experimental result was found to be consistent with a negative linewidth enhancement factor and showed that the anomaly in the dispersive behavior of a quantum dot structure eliminated the longstanding beam-filamentation problem.",

author = "Schneider, \{H. C.\} and Chow, \{W. W.\} and Smowton, \{P. M.\} and Pearce, \{E. J.\} and Koch, \{S. W.\}",

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AU - Schneider, H. C.

AU - Chow, W. W.

AU - Smowton, P. M.

AU - Pearce, E. J.

AU - Koch, S. W.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The anomalous carrier-induced dispersion in semiconductor quantum dots was studied. The experiment was performed using quantum-dot lasers consisting of InGaAs quantum dots embedded in GaAs quantum well layers. The experimental result was found to be consistent with a negative linewidth enhancement factor and showed that the anomaly in the dispersive behavior of a quantum dot structure eliminated the longstanding beam-filamentation problem.

AB - The anomalous carrier-induced dispersion in semiconductor quantum dots was studied. The experiment was performed using quantum-dot lasers consisting of InGaAs quantum dots embedded in GaAs quantum well layers. The experimental result was found to be consistent with a negative linewidth enhancement factor and showed that the anomaly in the dispersive behavior of a quantum dot structure eliminated the longstanding beam-filamentation problem.

UR - https://www.scopus.com/pages/publications/0036960796

U2 - 10.1364/OPN.13.12.000050

DO - 10.1364/OPN.13.12.000050

M3 - Other contribution

ER -

Anomalous carrier-induced dispersion in semiconductor quantum dots

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