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Anomaly in the excitation dependence of the optical gain of semiconductor quantum dots

  • M. Lorke
  • , W. W. Chow
  • , T. R. Nielsen
  • , J. Seebeck
  • , P. Gartner
  • , F. Jahnke

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

Optical gain behavior of semiconductor quantum dots is studied within a quantum-kinetic theory, with carrier-carrier and carrier-phonon scattering treated using renormalized quasiparticle states. For inhomogeneously broadened samples, we found the excitation dependence of gain to be basically similar to quantum-well and bulk systems. However, for a high quality sample, our theory predicts the possibility of a decreasing peak gain with increasing carrier density. This anomaly can be attributed to the delicate balance between state filling and dephasing. © 2006 The American Physical Society.
Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number3
DOIs
StatePublished - Aug 1 2006
Externally publishedYes

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