Antiphase boundaries in GaAs

N. H. Cho; B. C. De Cooman; C. B. Carter; R. Fletcher; D. K. Wagner

doi:10.1063/1.95963

Antiphase boundaries in GaAs

N. H. Cho
, B. C. De Cooman
, C. B. Carter
, R. Fletcher
, D. K. Wagner

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

Antiphase boundaries in GaAs have been produced by growing the GaAs on {001} Ge substrates. The GaAs was grown by the technique of organometallic vapor phase epitaxy to a thickness in excess of 1 μm. The antiphase boundaries are shown to be faceted with facets parallel to the {110} planes being particularly common. The rigid-body translation at the different facet planes is shown to be small for the {110} planes but it can be large for other facet planes.

Original language	English
Pages (from-to)	879-881
Number of pages	3
Journal	Applied Physics Letters
Volume	47
Issue number	8
DOIs	https://doi.org/10.1063/1.95963
State	Published - Jan 1 1985
Externally published	Yes

Access to Document

10.1063/1.95963

Cite this

@article{14c53ddc8fc8434da238781e2847206d,

title = "Antiphase boundaries in GaAs",

abstract = "Antiphase boundaries in GaAs have been produced by growing the GaAs on \{001\} Ge substrates. The GaAs was grown by the technique of organometallic vapor phase epitaxy to a thickness in excess of 1 μm. The antiphase boundaries are shown to be faceted with facets parallel to the \{110\} planes being particularly common. The rigid-body translation at the different facet planes is shown to be small for the \{110\} planes but it can be large for other facet planes.",

author = "Cho, \{N. H.\} and \{De Cooman\}, \{B. C.\} and Carter, \{C. B.\} and R. Fletcher and Wagner, \{D. K.\}",

year = "1985",

month = jan,

day = "1",

doi = "10.1063/1.95963",

language = "English",

volume = "47",

pages = "879--881",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Antiphase boundaries in GaAs

AU - Cho, N. H.

AU - De Cooman, B. C.

AU - Carter, C. B.

AU - Fletcher, R.

AU - Wagner, D. K.

PY - 1985/1/1

Y1 - 1985/1/1

N2 - Antiphase boundaries in GaAs have been produced by growing the GaAs on {001} Ge substrates. The GaAs was grown by the technique of organometallic vapor phase epitaxy to a thickness in excess of 1 μm. The antiphase boundaries are shown to be faceted with facets parallel to the {110} planes being particularly common. The rigid-body translation at the different facet planes is shown to be small for the {110} planes but it can be large for other facet planes.

AB - Antiphase boundaries in GaAs have been produced by growing the GaAs on {001} Ge substrates. The GaAs was grown by the technique of organometallic vapor phase epitaxy to a thickness in excess of 1 μm. The antiphase boundaries are shown to be faceted with facets parallel to the {110} planes being particularly common. The rigid-body translation at the different facet planes is shown to be small for the {110} planes but it can be large for other facet planes.

UR - https://www.scopus.com/pages/publications/0000094889

U2 - 10.1063/1.95963

DO - 10.1063/1.95963

M3 - Article

SN - 0003-6951

VL - 47

SP - 879

EP - 881

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Antiphase boundaries in GaAs

Abstract

Access to Document

Fingerprint

Cite this