Abstract
Terahertz near-field microscopy may serve as a novel tool to measure the high-frequency permittivity of dielectric surfaces on submicrometre semiconductor structures. We present an apertureless THz near-field microscope, which allows for spatial resolutions as small as 150 nm. A new model has been developed that considers the field coupling the scanning probe with a sample and reproduces the image data qualitatively and quantitatively.
| Original language | English |
|---|---|
| Journal | Semiconductor Science and Technology |
| Volume | 20 |
| Issue number | 7 |
| DOIs | |
| State | Published - Jul 1 2005 |
| Externally published | Yes |
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