Approaching intraband relaxation rates in the high-speed modulation of semiconductor lasers

Weng W. Chow; G. Allen Vawter; Junpeng Guo

doi:10.1109/JQE.2004.831627

Approaching intraband relaxation rates in the high-speed modulation of semiconductor lasers

Weng W. Chow
, G. Allen Vawter
, Junpeng Guo

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

This paper uses a nonequilibrium semiconductor laser model to investigate high-modulation bandwidth operation in semiconductor lasers. In particular, limitations to ≳ 100 GHz modulation response, which approaches the carrier-phonon scattering rate, are analyzed. It is found that plasma heating leads to a dynamic carrier population bottleneck, which limits scaling of modulation bandwidth. An optical injection scheme is proposed to verify this phenomenon experimentally. © 2004 IEEE.

Original language	English
Pages (from-to)	989-995
Number of pages	7
Journal	IEEE Journal of Quantum Electronics
Volume	40
Issue number	8
DOIs	https://doi.org/10.1109/JQE.2004.831627
State	Published - Aug 1 2004
Externally published	Yes

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title = "Approaching intraband relaxation rates in the high-speed modulation of semiconductor lasers",

abstract = "This paper uses a nonequilibrium semiconductor laser model to investigate high-modulation bandwidth operation in semiconductor lasers. In particular, limitations to ≳ 100 GHz modulation response, which approaches the carrier-phonon scattering rate, are analyzed. It is found that plasma heating leads to a dynamic carrier population bottleneck, which limits scaling of modulation bandwidth. An optical injection scheme is proposed to verify this phenomenon experimentally. {\textcopyright} 2004 IEEE.",

author = "Chow, \{Weng W.\} and Vawter, \{G. Allen\} and Junpeng Guo",

year = "2004",

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doi = "10.1109/JQE.2004.831627",

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AU - Chow, Weng W.

AU - Vawter, G. Allen

AU - Guo, Junpeng

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Y1 - 2004/8/1

N2 - This paper uses a nonequilibrium semiconductor laser model to investigate high-modulation bandwidth operation in semiconductor lasers. In particular, limitations to ≳ 100 GHz modulation response, which approaches the carrier-phonon scattering rate, are analyzed. It is found that plasma heating leads to a dynamic carrier population bottleneck, which limits scaling of modulation bandwidth. An optical injection scheme is proposed to verify this phenomenon experimentally. © 2004 IEEE.

AB - This paper uses a nonequilibrium semiconductor laser model to investigate high-modulation bandwidth operation in semiconductor lasers. In particular, limitations to ≳ 100 GHz modulation response, which approaches the carrier-phonon scattering rate, are analyzed. It is found that plasma heating leads to a dynamic carrier population bottleneck, which limits scaling of modulation bandwidth. An optical injection scheme is proposed to verify this phenomenon experimentally. © 2004 IEEE.

UR - https://www.scopus.com/pages/publications/3943105491

U2 - 10.1109/JQE.2004.831627

DO - 10.1109/JQE.2004.831627

M3 - Article

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VL - 40

SP - 989

EP - 995

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 8

ER -

Approaching intraband relaxation rates in the high-speed modulation of semiconductor lasers

Abstract

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