Atomic-layer deposition of wear-resistant coatings for microelectromechanical devices

T. M. Mayer; J. W. Elam; S. M. George; P. G. Kotula; R. S. Goeke

doi:10.1063/1.1570926

Atomic-layer deposition of wear-resistant coatings for microelectromechanical devices

T. M. Mayer
, J. W. Elam
, S. M. George
, P. G. Kotula
, R. S. Goeke

Research output: Contribution to journal › Article › peer-review

191 Scopus citations

Abstract

Thin, conformal, wear-resistant coatings were applied to microelectromechanical devices by atomic-layer deposition (ALD). ALD of coatings was carried out with N2 as a carrier gas in a viscous flow reactor at 1 Torr and 168°C. It was found through cross-section transmission electron microscopy that films are uniform to within 5% on MEMS device structures with aspect ratio ranging from 0 to >100.

Original language	English
Pages (from-to)	2883-2885
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	17
DOIs	https://doi.org/10.1063/1.1570926
State	Published - Apr 28 2003
Externally published	Yes

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@article{fc21876d60d7438ebdffb8914057ef05,

title = "Atomic-layer deposition of wear-resistant coatings for microelectromechanical devices",

abstract = "Thin, conformal, wear-resistant coatings were applied to microelectromechanical devices by atomic-layer deposition (ALD). ALD of coatings was carried out with N2 as a carrier gas in a viscous flow reactor at 1 Torr and 168°C. It was found through cross-section transmission electron microscopy that films are uniform to within 5\% on MEMS device structures with aspect ratio ranging from 0 to >100.",

author = "Mayer, \{T. M.\} and Elam, \{J. W.\} and George, \{S. M.\} and Kotula, \{P. G.\} and Goeke, \{R. S.\}",

year = "2003",

month = apr,

day = "28",

doi = "10.1063/1.1570926",

language = "English",

volume = "82",

pages = "2883--2885",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Atomic-layer deposition of wear-resistant coatings for microelectromechanical devices

AU - Mayer, T. M.

AU - Elam, J. W.

AU - George, S. M.

AU - Kotula, P. G.

AU - Goeke, R. S.

PY - 2003/4/28

Y1 - 2003/4/28

N2 - Thin, conformal, wear-resistant coatings were applied to microelectromechanical devices by atomic-layer deposition (ALD). ALD of coatings was carried out with N2 as a carrier gas in a viscous flow reactor at 1 Torr and 168°C. It was found through cross-section transmission electron microscopy that films are uniform to within 5% on MEMS device structures with aspect ratio ranging from 0 to >100.

AB - Thin, conformal, wear-resistant coatings were applied to microelectromechanical devices by atomic-layer deposition (ALD). ALD of coatings was carried out with N2 as a carrier gas in a viscous flow reactor at 1 Torr and 168°C. It was found through cross-section transmission electron microscopy that films are uniform to within 5% on MEMS device structures with aspect ratio ranging from 0 to >100.

UR - https://www.scopus.com/pages/publications/0038636032

U2 - 10.1063/1.1570926

DO - 10.1063/1.1570926

M3 - Article

SN - 0003-6951

VL - 82

SP - 2883

EP - 2885

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Atomic-layer deposition of wear-resistant coatings for microelectromechanical devices

Abstract

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