Bandgap renormalization: GaAs/AlGaAs quantum wells

Eric D. Jones; Mark Blount; Weng W. Chow; Hong Q. Hou; Jerry A. Simmons; Yongmin Kim; Thomas Schmiedel

doi:10.1117/12.316668

Bandgap renormalization: GaAs/AlGaAs quantum wells

Eric D. Jones
, Mark Blount
, Weng W. Chow
, Hong Q. Hou
, Jerry A. Simmons
, Yongmin Kim
, Thomas Schmiedel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Bandgap energy renormalization by many-body interactions has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K and for magnetic fields up to 30 T. The 2D-carrier densities varied between 1 and 12 × 1011cm -2. At the maximum 2D-carrier density, the bandgap energy difference between the doped and undoped samples was about 34 meV. ©2003 Copyright SPIE - The International Society for Optical Engineering.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Pages	350-356
Number of pages	7
Volume	3283
DOIs	https://doi.org/10.1117/12.316668
State	Published - Dec 1 1998
Externally published	Yes

Access to Document

10.1117/12.316668

Cite this

@inproceedings{e37b3d29edad4b7eab46795aa186564e,

title = "Bandgap renormalization: GaAs/AlGaAs quantum wells",

abstract = "Bandgap energy renormalization by many-body interactions has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K and for magnetic fields up to 30 T. The 2D-carrier densities varied between 1 and 12 × 1011cm -2. At the maximum 2D-carrier density, the bandgap energy difference between the doped and undoped samples was about 34 meV. {\textcopyright}2003 Copyright SPIE - The International Society for Optical Engineering.",

author = "Jones, \{Eric D.\} and Mark Blount and Chow, \{Weng W.\} and Hou, \{Hong Q.\} and Simmons, \{Jerry A.\} and Yongmin Kim and Thomas Schmiedel",

year = "1998",

month = dec,

day = "1",

doi = "10.1117/12.316668",

language = "English",

volume = "3283",

pages = "350--356",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Bandgap renormalization: GaAs/AlGaAs quantum wells

AU - Jones, Eric D.

AU - Blount, Mark

AU - Chow, Weng W.

AU - Hou, Hong Q.

AU - Simmons, Jerry A.

AU - Kim, Yongmin

AU - Schmiedel, Thomas

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Bandgap energy renormalization by many-body interactions has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K and for magnetic fields up to 30 T. The 2D-carrier densities varied between 1 and 12 × 1011cm -2. At the maximum 2D-carrier density, the bandgap energy difference between the doped and undoped samples was about 34 meV. ©2003 Copyright SPIE - The International Society for Optical Engineering.

AB - Bandgap energy renormalization by many-body interactions has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K and for magnetic fields up to 30 T. The 2D-carrier densities varied between 1 and 12 × 1011cm -2. At the maximum 2D-carrier density, the bandgap energy difference between the doped and undoped samples was about 34 meV. ©2003 Copyright SPIE - The International Society for Optical Engineering.

UR - https://www.scopus.com/pages/publications/0010368946

U2 - 10.1117/12.316668

DO - 10.1117/12.316668

M3 - Conference contribution

VL - 3283

SP - 350

EP - 356

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Bandgap renormalization: GaAs/AlGaAs quantum wells

Abstract

Access to Document

Fingerprint

Cite this