Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells

E. D. Jones; M. Blount; W. Chow; H. Hou; J. A. Simmons

doi:10.1109/ISCS.1998.711611

Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells

E. D. Jones
, M. Blount
, W. Chow
, H. Hou
, J. A. Simmons

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Bandgap energy renormalization due to many body effects has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K. The 2D-carrier densities varied between 1 and 12×1011 cm-2. At the maximum 2D-carrier density, the bandgap energy reduction compared to an undoped specimen was found to be about 34 meV.

Original language	English
Title of host publication	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
Pages	187-190
Number of pages	4
DOIs	https://doi.org/10.1109/ISCS.1998.711611
State	Published - Jan 1 1997
Externally published	Yes

Access to Document

10.1109/ISCS.1998.711611

Cite this

@inproceedings{24a87e947a714d61b9bffce7af2ca5be,

title = "Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells",

abstract = "Bandgap energy renormalization due to many body effects has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K. The 2D-carrier densities varied between 1 and 12{\texttimes}1011 cm-2. At the maximum 2D-carrier density, the bandgap energy reduction compared to an undoped specimen was found to be about 34 meV.",

author = "Jones, \{E. D.\} and M. Blount and W. Chow and H. Hou and Simmons, \{J. A.\}",

year = "1997",

month = jan,

day = "1",

doi = "10.1109/ISCS.1998.711611",

language = "English",

isbn = "0780338839",

pages = "187--190",

booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",

}

TY - GEN

T1 - Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells

AU - Jones, E. D.

AU - Blount, M.

AU - Chow, W.

AU - Hou, H.

AU - Simmons, J. A.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Bandgap energy renormalization due to many body effects has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K. The 2D-carrier densities varied between 1 and 12×1011 cm-2. At the maximum 2D-carrier density, the bandgap energy reduction compared to an undoped specimen was found to be about 34 meV.

AB - Bandgap energy renormalization due to many body effects has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K. The 2D-carrier densities varied between 1 and 12×1011 cm-2. At the maximum 2D-carrier density, the bandgap energy reduction compared to an undoped specimen was found to be about 34 meV.

UR - https://www.scopus.com/pages/publications/85053134671

U2 - 10.1109/ISCS.1998.711611

DO - 10.1109/ISCS.1998.711611

M3 - Conference contribution

SN - 0780338839

SN - 9780780338838

SP - 187

EP - 190

BT - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

ER -

Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells

Abstract

Access to Document

Fingerprint

Cite this