Behavior of defects in dual-implanted AlGaAs superlattices

N. David Theodore; Steven A. Schwarz; D. M. Hwang; C. Barry Carter

doi:10.1016/0167-577X(91)90003-O

Behavior of defects in dual-implanted AlGaAs superlattices

N. David Theodore
, Steven A. Schwarz
, D. M. Hwang
, C. Barry Carter

Research output: Contribution to journal › Article › peer-review

Abstract

The behavior of GaAs AlAs superlattices implanted with Ge and Be has been studied. As-implanted specimens showed the presence of microtwins and strain contrast. These arise due to the effect of dynamic annealing on the high concentrations of self-interstitials and of implanted atoms present in the superlattice. Dislocation loops observed in annealed samples were present on {111} or {110} planes, these being the low-energy planes in GaAs. Co-implanted samples showed a difference in behavior of damage from singly implanted samples. The difference is explained in terms of an interaction between point defects created by one implant with dopant atoms of the other implant. Voids were seen in near-surface layers of co-implanted superlattices. The origin of the voids is explained in terms of coalescence of vacancies that result from the implant. © 1991.

Original language	English
Pages (from-to)	222-228
Number of pages	7
Journal	Materials Letters
Volume	12
Issue number	4
DOIs	https://doi.org/10.1016/0167-577X(91)90003-O
State	Published - Jan 1 1991
Externally published	Yes

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title = "Behavior of defects in dual-implanted AlGaAs superlattices",

abstract = "The behavior of GaAs AlAs superlattices implanted with Ge and Be has been studied. As-implanted specimens showed the presence of microtwins and strain contrast. These arise due to the effect of dynamic annealing on the high concentrations of self-interstitials and of implanted atoms present in the superlattice. Dislocation loops observed in annealed samples were present on \{111\} or \{110\} planes, these being the low-energy planes in GaAs. Co-implanted samples showed a difference in behavior of damage from singly implanted samples. The difference is explained in terms of an interaction between point defects created by one implant with dopant atoms of the other implant. Voids were seen in near-surface layers of co-implanted superlattices. The origin of the voids is explained in terms of coalescence of vacancies that result from the implant. {\textcopyright} 1991.",

author = "Theodore, \{N. David\} and Schwarz, \{Steven A.\} and Hwang, \{D. M.\} and Carter, \{C. Barry\}",

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doi = "10.1016/0167-577X(91)90003-O",

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TY - JOUR

T1 - Behavior of defects in dual-implanted AlGaAs superlattices

AU - Theodore, N. David

AU - Schwarz, Steven A.

AU - Hwang, D. M.

AU - Carter, C. Barry

PY - 1991/1/1

Y1 - 1991/1/1

N2 - The behavior of GaAs AlAs superlattices implanted with Ge and Be has been studied. As-implanted specimens showed the presence of microtwins and strain contrast. These arise due to the effect of dynamic annealing on the high concentrations of self-interstitials and of implanted atoms present in the superlattice. Dislocation loops observed in annealed samples were present on {111} or {110} planes, these being the low-energy planes in GaAs. Co-implanted samples showed a difference in behavior of damage from singly implanted samples. The difference is explained in terms of an interaction between point defects created by one implant with dopant atoms of the other implant. Voids were seen in near-surface layers of co-implanted superlattices. The origin of the voids is explained in terms of coalescence of vacancies that result from the implant. © 1991.

AB - The behavior of GaAs AlAs superlattices implanted with Ge and Be has been studied. As-implanted specimens showed the presence of microtwins and strain contrast. These arise due to the effect of dynamic annealing on the high concentrations of self-interstitials and of implanted atoms present in the superlattice. Dislocation loops observed in annealed samples were present on {111} or {110} planes, these being the low-energy planes in GaAs. Co-implanted samples showed a difference in behavior of damage from singly implanted samples. The difference is explained in terms of an interaction between point defects created by one implant with dopant atoms of the other implant. Voids were seen in near-surface layers of co-implanted superlattices. The origin of the voids is explained in terms of coalescence of vacancies that result from the implant. © 1991.

UR - https://www.scopus.com/pages/publications/0026255612

U2 - 10.1016/0167-577X(91)90003-O

DO - 10.1016/0167-577X(91)90003-O

M3 - Article

SN - 0167-577X

VL - 12

SP - 222

EP - 228

JO - Materials Letters

JF - Materials Letters

IS - 4

ER -

Behavior of defects in dual-implanted AlGaAs superlattices

Abstract

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