Blister formation in ion-implanted GaAs: Role of diffusivity

R. R. Collino; B. B. Dick; F. Naab; Yongqiang Wang; M. D. Thouless; R. S. Goldman

doi:10.1063/1.3224199

Blister formation in ion-implanted GaAs: Role of diffusivity

R. R. Collino
, B. B. Dick
, F. Naab
, Yongqiang Wang
, M. D. Thouless
, R. S. Goldman

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have investigated the influence of substrate temperature during implantation, T_implant, on blister formation in GaAs:N layers produced by N ion implantation followed by rapid thermal annealing. Similar depths of popped blisters (craters) and damage profiles were observed for both low and high T_implant. This is in contrast to reports of T _implant -dependent blister formation in higher-diffusivity systems such as GaAs:H and Si:H. The apparent T_implant -insensitivity of blister formation in GaAs:N is likely due to the lower diffusivity of N in GaAs in comparison to that of H in GaAs and Si.

Original language	English
Article number	111912
Journal	Applied Physics Letters
Volume	95
Issue number	11
DOIs	https://doi.org/10.1063/1.3224199
State	Published - Oct 5 2009

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@article{f83799c5231f49fe8baec389ca49f060,

title = "Blister formation in ion-implanted GaAs: Role of diffusivity",

abstract = "We have investigated the influence of substrate temperature during implantation, Timplant, on blister formation in GaAs:N layers produced by N ion implantation followed by rapid thermal annealing. Similar depths of popped blisters (craters) and damage profiles were observed for both low and high Timplant. This is in contrast to reports of T implant -dependent blister formation in higher-diffusivity systems such as GaAs:H and Si:H. The apparent Timplant -insensitivity of blister formation in GaAs:N is likely due to the lower diffusivity of N in GaAs in comparison to that of H in GaAs and Si.",

author = "Collino, \{R. R.\} and Dick, \{B. B.\} and F. Naab and Yongqiang Wang and Thouless, \{M. D.\} and Goldman, \{R. S.\}",

year = "2009",

month = oct,

day = "5",

doi = "10.1063/1.3224199",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Blister formation in ion-implanted GaAs

T2 - Role of diffusivity

AU - Collino, R. R.

AU - Dick, B. B.

AU - Naab, F.

AU - Wang, Yongqiang

AU - Thouless, M. D.

AU - Goldman, R. S.

PY - 2009/10/5

Y1 - 2009/10/5

N2 - We have investigated the influence of substrate temperature during implantation, Timplant, on blister formation in GaAs:N layers produced by N ion implantation followed by rapid thermal annealing. Similar depths of popped blisters (craters) and damage profiles were observed for both low and high Timplant. This is in contrast to reports of T implant -dependent blister formation in higher-diffusivity systems such as GaAs:H and Si:H. The apparent Timplant -insensitivity of blister formation in GaAs:N is likely due to the lower diffusivity of N in GaAs in comparison to that of H in GaAs and Si.

AB - We have investigated the influence of substrate temperature during implantation, Timplant, on blister formation in GaAs:N layers produced by N ion implantation followed by rapid thermal annealing. Similar depths of popped blisters (craters) and damage profiles were observed for both low and high Timplant. This is in contrast to reports of T implant -dependent blister formation in higher-diffusivity systems such as GaAs:H and Si:H. The apparent Timplant -insensitivity of blister formation in GaAs:N is likely due to the lower diffusivity of N in GaAs in comparison to that of H in GaAs and Si.

UR - https://www.scopus.com/pages/publications/70349481150

U2 - 10.1063/1.3224199

DO - 10.1063/1.3224199

M3 - Article

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111912

ER -

Blister formation in ion-implanted GaAs: Role of diffusivity

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