Boron depth profiles in silicon and simulation of α-spectra

Changgeng Liao; Hui Jian; Yongqiang Wang; Zhihao Zheng

doi:10.1016/0168-583X(94)00330-0

Boron depth profiles in silicon and simulation of α-spectra

Changgeng Liao
, Hui Jian
, Yongqiang Wang
, Zhihao Zheng

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A method for simulating α-spectra, when measuring the boron depth profiles by the¹¹B(p, α)⁸Be at E_p=660keV broad resonance reaction, is reported. The method is applied for obtaining the boron depth profiles in boron-diffused silicon, boron-implanted silicon and boron-doped amorphous silicon film. The results show that this method is valuable for the study of boron depth profiles.

Original language	English
Pages (from-to)	97-101
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	95
Issue number	1
DOIs	https://doi.org/10.1016/0168-583X(94)00330-0
State	Published - Jan 1995
Externally published	Yes

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10.1016/0168-583X(94)00330-0

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title = "Boron depth profiles in silicon and simulation of α-spectra",

abstract = "A method for simulating α-spectra, when measuring the boron depth profiles by the11B(p, α)8Be at Ep=660keV broad resonance reaction, is reported. The method is applied for obtaining the boron depth profiles in boron-diffused silicon, boron-implanted silicon and boron-doped amorphous silicon film. The results show that this method is valuable for the study of boron depth profiles.",

author = "Changgeng Liao and Hui Jian and Yongqiang Wang and Zhihao Zheng",

year = "1995",

month = jan,

doi = "10.1016/0168-583X(94)00330-0",

language = "English",

volume = "95",

pages = "97--101",

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T1 - Boron depth profiles in silicon and simulation of α-spectra

AU - Liao, Changgeng

AU - Jian, Hui

AU - Wang, Yongqiang

AU - Zheng, Zhihao

PY - 1995/1

Y1 - 1995/1

N2 - A method for simulating α-spectra, when measuring the boron depth profiles by the11B(p, α)8Be at Ep=660keV broad resonance reaction, is reported. The method is applied for obtaining the boron depth profiles in boron-diffused silicon, boron-implanted silicon and boron-doped amorphous silicon film. The results show that this method is valuable for the study of boron depth profiles.

AB - A method for simulating α-spectra, when measuring the boron depth profiles by the11B(p, α)8Be at Ep=660keV broad resonance reaction, is reported. The method is applied for obtaining the boron depth profiles in boron-diffused silicon, boron-implanted silicon and boron-doped amorphous silicon film. The results show that this method is valuable for the study of boron depth profiles.

UR - https://www.scopus.com/pages/publications/0008862991

U2 - 10.1016/0168-583X(94)00330-0

DO - 10.1016/0168-583X(94)00330-0

M3 - Article

SN - 0168-583X

VL - 95

SP - 97

EP - 101

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1

ER -

Boron depth profiles in silicon and simulation of α-spectra

Abstract

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