Boron profiles in amorphous and crystalline silicon

Zheng Zhihao; Wang Yongqiang; Xiang Jinzhong; Ma Zhihui; Liao Changgeng

doi:10.1016/0042-207X(89)90231-5

Boron profiles in amorphous and crystalline silicon

Zheng Zhihao
, Wang Yongqiang
, Xiang Jinzhong
, Ma Zhihui
, Liao Changgeng

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The resonance reaction ¹¹B(p, α)⁸Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.

Original language	English
Pages (from-to)	323-324
Number of pages	2
Journal	Vacuum
Volume	39
Issue number	2-4
DOIs	https://doi.org/10.1016/0042-207X(89)90231-5
State	Published - 1989
Externally published	Yes

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title = "Boron profiles in amorphous and crystalline silicon",

abstract = "The resonance reaction 11B(p, α)8Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.",

author = "Zheng Zhihao and Wang Yongqiang and Xiang Jinzhong and Ma Zhihui and Liao Changgeng",

year = "1989",

doi = "10.1016/0042-207X(89)90231-5",

language = "English",

volume = "39",

pages = "323--324",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd.",

number = "2-4",

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TY - JOUR

T1 - Boron profiles in amorphous and crystalline silicon

AU - Zhihao, Zheng

AU - Yongqiang, Wang

AU - Jinzhong, Xiang

AU - Zhihui, Ma

AU - Changgeng, Liao

PY - 1989

Y1 - 1989

N2 - The resonance reaction 11B(p, α)8Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.

AB - The resonance reaction 11B(p, α)8Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.

UR - https://www.scopus.com/pages/publications/0024879381

U2 - 10.1016/0042-207X(89)90231-5

DO - 10.1016/0042-207X(89)90231-5

M3 - Article

SN - 0042-207X

VL - 39

SP - 323

EP - 324

JO - Vacuum

JF - Vacuum

IS - 2-4

ER -

Boron profiles in amorphous and crystalline silicon

Abstract

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