Abstract
We demonstrate significant epsilon-near-zero point shifts (11.3 μm to 5.3 μm), extraordinarily large (135%) optically-induced reflection modulation with picosecond response times, and carrier relaxation time-engineering in cadmium oxide via Yttrium doping.
| Original language | English |
|---|---|
| Title of host publication | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2020-May |
| State | Published - May 1 2020 |
| Externally published | Yes |
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