Broadband, integrated, micron-scale, all-optical Si<inf>3</inf>N<inf>4</inf>/VO<inf>2</inf> modulators with pJ switching energy

Herman M.K. Wong; Zhizhong Yan; Kent A. Hallman; Robert E. Marvel; Rohit P. Prasankumar; Richard F. Haglund; Amr S. Helmy

doi:10.1364/CLEO_SI.2020.STh3R.3

Broadband, integrated, micron-scale, all-optical Si<inf>3</inf>N<inf>4</inf>/VO<inf>2</inf> modulators with pJ switching energy

Herman M.K. Wong
, Zhizhong Yan
, Kent A. Hallman
, Robert E. Marvel
, Rohit P. Prasankumar
, Richard F. Haglund
, Amr S. Helmy

Los Alamos National Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

All-optical, non-resonant, in-plane Si3N4/VO2 modulators offering 6.4 pJ switching energy, 1.68 dB/µm extinction ratio, and 4 µm length are demonstrated. This is obtained with broadband control (800-1000 nm) and signal (1500-1600 nm) wavelengths.

Original language	English
Title of host publication	Optics InfoBase Conference Papers
Volume	Part F183-CLEO-SI 2020
DOIs	https://doi.org/10.1364/CLEO_SI.2020.STh3R.3
State	Published - Jan 1 2020

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10.1364/CLEO_SI.2020.STh3R.3

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@inproceedings{6645137301a440e2977c2c0ec98f44b2,

title = "Broadband, integrated, micron-scale, all-optical Si3N4/VO2 modulators with pJ switching energy",

abstract = "All-optical, non-resonant, in-plane Si3N4/VO2 modulators offering 6.4 pJ switching energy, 1.68 dB/µm extinction ratio, and 4 µm length are demonstrated. This is obtained with broadband control (800-1000 nm) and signal (1500-1600 nm) wavelengths.",

author = "Wong, \{Herman M.K.\} and Zhizhong Yan and Hallman, \{Kent A.\} and Marvel, \{Robert E.\} and Prasankumar, \{Rohit P.\} and Haglund, \{Richard F.\} and Helmy, \{Amr S.\}",

year = "2020",

month = jan,

day = "1",

doi = "10.1364/CLEO\_SI.2020.STh3R.3",

language = "English",

isbn = "9781557528209",

volume = "Part F183-CLEO-SI 2020",

booktitle = "Optics InfoBase Conference Papers",

}

TY - GEN

T1 - Broadband, integrated, micron-scale, all-optical Si3N4/VO2 modulators with pJ switching energy

AU - Wong, Herman M.K.

AU - Yan, Zhizhong

AU - Hallman, Kent A.

AU - Marvel, Robert E.

AU - Prasankumar, Rohit P.

AU - Haglund, Richard F.

AU - Helmy, Amr S.

PY - 2020/1/1

Y1 - 2020/1/1

N2 - All-optical, non-resonant, in-plane Si3N4/VO2 modulators offering 6.4 pJ switching energy, 1.68 dB/µm extinction ratio, and 4 µm length are demonstrated. This is obtained with broadband control (800-1000 nm) and signal (1500-1600 nm) wavelengths.

AB - All-optical, non-resonant, in-plane Si3N4/VO2 modulators offering 6.4 pJ switching energy, 1.68 dB/µm extinction ratio, and 4 µm length are demonstrated. This is obtained with broadband control (800-1000 nm) and signal (1500-1600 nm) wavelengths.

UR - https://www.scopus.com/pages/publications/85095458055

U2 - 10.1364/CLEO_SI.2020.STh3R.3

DO - 10.1364/CLEO_SI.2020.STh3R.3

M3 - Conference contribution

SN - 9781557528209

VL - Part F183-CLEO-SI 2020

BT - Optics InfoBase Conference Papers

ER -

Broadband, integrated, micron-scale, all-optical Si<inf>3</inf>N<inf>4</inf>/VO<inf>2</inf> modulators with pJ switching energy

Abstract

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