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Broadband, Integrated, Micron-Scale, All-Optical Si3N4/VO2 Modulators with pJ Switching Energy

  • Herman M.K. Wong
  • , Zhizhong Yan
  • , Kent A. Hallman
  • , Robert E. Marvel
  • , Rohit P. Prasankumar
  • , Richard F. Haglund
  • , Amr S. Helmy

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

All-optical, non-resonant, in-plane Si3N4/VO2 modulators offering 6.4 pJ switching energy, 1.68 dB/μm extinction ratio, and 4 μm length are demonstrated. This is obtained with broadband control (800-1000 nm) and signal (1500-1600 nm) wavelengths.

Original languageEnglish
Title of host publication2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
PublisherUnknown Publisher
VolumePart F183-CLEO-SI 2020
ISBN (Electronic)9781943580767
ISBN (Print)9781557528209
DOIs
StatePublished - May 1 2020
Externally publishedYes
Event2020 Conference on Lasers and Electro-Optics, CLEO 2020 -
Duration: May 1 2020 → …

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2020-May
ISSN (Print)1092-8081

Conference

Conference2020 Conference on Lasers and Electro-Optics, CLEO 2020
Period05/1/20 → …

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