Carrier correlation effects in a quantum-well semiconductor laser medium

W. W. Chow; A. Knorr; S. Hughes; A. Girndt; S. W. Koch

doi:10.1109/2944.605645

Carrier correlation effects in a quantum-well semiconductor laser medium

W. W. Chow
, A. Knorr
, S. Hughes
, A. Girndt
, S. W. Koch

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

This paper describes the results of a microscopic treatment of carrier-carrier scattering effects in the optical gain and refractive index spectra of a quantum-well semiconductor laser structure. The approach uses the Semiconductor Maxwell Bloch equations to describe the interaction between the carriers and the laser field, in the presence of many-body Coulomb interactions. Coulomb correlation effects are treated at the level of quantum kinetic theory in the Markovian limit. This approach shows the presence of nondiagonal Coulomb correlation contributions, in addition to the familiar diagonal contributions giving rise to polarization dephasing.

Original language	English
Pages (from-to)	136-141
Number of pages	6
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	3
Issue number	2
DOIs	https://doi.org/10.1109/2944.605645
State	Published - Apr 1 1997
Externally published	Yes

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@article{626fdbc7983b4ffc8d415e09e18230a7,

title = "Carrier correlation effects in a quantum-well semiconductor laser medium",

abstract = "This paper describes the results of a microscopic treatment of carrier-carrier scattering effects in the optical gain and refractive index spectra of a quantum-well semiconductor laser structure. The approach uses the Semiconductor Maxwell Bloch equations to describe the interaction between the carriers and the laser field, in the presence of many-body Coulomb interactions. Coulomb correlation effects are treated at the level of quantum kinetic theory in the Markovian limit. This approach shows the presence of nondiagonal Coulomb correlation contributions, in addition to the familiar diagonal contributions giving rise to polarization dephasing.",

author = "Chow, \{W. W.\} and A. Knorr and S. Hughes and A. Girndt and Koch, \{S. W.\}",

year = "1997",

month = apr,

day = "1",

doi = "10.1109/2944.605645",

language = "English",

volume = "3",

pages = "136--141",

journal = "IEEE Journal on Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Carrier correlation effects in a quantum-well semiconductor laser medium

AU - Chow, W. W.

AU - Knorr, A.

AU - Hughes, S.

AU - Girndt, A.

AU - Koch, S. W.

PY - 1997/4/1

Y1 - 1997/4/1

N2 - This paper describes the results of a microscopic treatment of carrier-carrier scattering effects in the optical gain and refractive index spectra of a quantum-well semiconductor laser structure. The approach uses the Semiconductor Maxwell Bloch equations to describe the interaction between the carriers and the laser field, in the presence of many-body Coulomb interactions. Coulomb correlation effects are treated at the level of quantum kinetic theory in the Markovian limit. This approach shows the presence of nondiagonal Coulomb correlation contributions, in addition to the familiar diagonal contributions giving rise to polarization dephasing.

AB - This paper describes the results of a microscopic treatment of carrier-carrier scattering effects in the optical gain and refractive index spectra of a quantum-well semiconductor laser structure. The approach uses the Semiconductor Maxwell Bloch equations to describe the interaction between the carriers and the laser field, in the presence of many-body Coulomb interactions. Coulomb correlation effects are treated at the level of quantum kinetic theory in the Markovian limit. This approach shows the presence of nondiagonal Coulomb correlation contributions, in addition to the familiar diagonal contributions giving rise to polarization dephasing.

UR - https://www.scopus.com/pages/publications/0031109234

U2 - 10.1109/2944.605645

DO - 10.1109/2944.605645

M3 - Article

SN - 1077-260X

VL - 3

SP - 136

EP - 141

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 2

ER -

Carrier correlation effects in a quantum-well semiconductor laser medium

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