Carrier dynamics in InGaAs with embedded ErAs nanoislands

Abul Kalam Azad; Rohit Prativadi Prasankumar; Diyar Talbayev; Antoinette Jane Taylor; Richard D. Averitt; Joshua M.O. Zide; Hong Lu; Arthur C. Gossard; John F. O'Hara

doi:10.1063/1.2989127

Carrier dynamics in InGaAs with embedded ErAs nanoislands

Abul Kalam Azad
, Rohit Prativadi Prasankumar
, Diyar Talbayev
, Antoinette Jane Taylor
, Richard D. Averitt
, Joshua M.O. Zide
, Hong Lu
, Arthur C. Gossard
, John F. O'Hara

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Using time-resolved optical-pump terahertz-probe spectroscopy, we study the ultrafast carrier dynamics in In_0.53Ga_0.47 As:ErAs, a potential candidate for 1550 nm based terahertz photoconductive detectors. Material growth is performed by codepositing ErAs nanoislands with Be-compensated InGaAs on an InP:Fe substrate using molecular beam epitaxy. The material shows a rapid photoconductivity response following optical excitation. Photoexcitation with ∼0.5 μJ/ cm² 800 nm femtosecond laser pulses yields a 3.2 ps carrier lifetime in optical-pump terahertz-probe experiments. We also measure the carrier lifetime using a 1550 nm femtosecond optical pump-probe system, and it is found to agree well with the terahertz measurements. These short lifetimes demonstrate significant potential for implementing terahertz systems using telecommunication based technologies.

Original language	English
Article number	121108
Journal	Applied Physics Letters
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.2989127
State	Published - Oct 6 2008

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title = "Carrier dynamics in InGaAs with embedded ErAs nanoislands",

abstract = "Using time-resolved optical-pump terahertz-probe spectroscopy, we study the ultrafast carrier dynamics in In0.53Ga0.47 As:ErAs, a potential candidate for 1550 nm based terahertz photoconductive detectors. Material growth is performed by codepositing ErAs nanoislands with Be-compensated InGaAs on an InP:Fe substrate using molecular beam epitaxy. The material shows a rapid photoconductivity response following optical excitation. Photoexcitation with ∼0.5 μJ/ cm2 800 nm femtosecond laser pulses yields a 3.2 ps carrier lifetime in optical-pump terahertz-probe experiments. We also measure the carrier lifetime using a 1550 nm femtosecond optical pump-probe system, and it is found to agree well with the terahertz measurements. These short lifetimes demonstrate significant potential for implementing terahertz systems using telecommunication based technologies.",

author = "Azad, \{Abul Kalam\} and Prasankumar, \{Rohit Prativadi\} and Diyar Talbayev and Taylor, \{Antoinette Jane\} and Averitt, \{Richard D.\} and Zide, \{Joshua M.O.\} and Hong Lu and Gossard, \{Arthur C.\} and O'Hara, \{John F.\}",

year = "2008",

month = oct,

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doi = "10.1063/1.2989127",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Carrier dynamics in InGaAs with embedded ErAs nanoislands

AU - Azad, Abul Kalam

AU - Prasankumar, Rohit Prativadi

AU - Talbayev, Diyar

AU - Taylor, Antoinette Jane

AU - Averitt, Richard D.

AU - Zide, Joshua M.O.

AU - Lu, Hong

AU - Gossard, Arthur C.

AU - O'Hara, John F.

PY - 2008/10/6

Y1 - 2008/10/6

N2 - Using time-resolved optical-pump terahertz-probe spectroscopy, we study the ultrafast carrier dynamics in In0.53Ga0.47 As:ErAs, a potential candidate for 1550 nm based terahertz photoconductive detectors. Material growth is performed by codepositing ErAs nanoislands with Be-compensated InGaAs on an InP:Fe substrate using molecular beam epitaxy. The material shows a rapid photoconductivity response following optical excitation. Photoexcitation with ∼0.5 μJ/ cm2 800 nm femtosecond laser pulses yields a 3.2 ps carrier lifetime in optical-pump terahertz-probe experiments. We also measure the carrier lifetime using a 1550 nm femtosecond optical pump-probe system, and it is found to agree well with the terahertz measurements. These short lifetimes demonstrate significant potential for implementing terahertz systems using telecommunication based technologies.

AB - Using time-resolved optical-pump terahertz-probe spectroscopy, we study the ultrafast carrier dynamics in In0.53Ga0.47 As:ErAs, a potential candidate for 1550 nm based terahertz photoconductive detectors. Material growth is performed by codepositing ErAs nanoislands with Be-compensated InGaAs on an InP:Fe substrate using molecular beam epitaxy. The material shows a rapid photoconductivity response following optical excitation. Photoexcitation with ∼0.5 μJ/ cm2 800 nm femtosecond laser pulses yields a 3.2 ps carrier lifetime in optical-pump terahertz-probe experiments. We also measure the carrier lifetime using a 1550 nm femtosecond optical pump-probe system, and it is found to agree well with the terahertz measurements. These short lifetimes demonstrate significant potential for implementing terahertz systems using telecommunication based technologies.

UR - https://www.scopus.com/pages/publications/52949122484

U2 - 10.1063/1.2989127

DO - 10.1063/1.2989127

M3 - Article

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121108

ER -

Carrier dynamics in InGaAs with embedded ErAs nanoislands

Abstract

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