Skip to main navigation Skip to search Skip to main content

Carrier-induced refractive-index change in quantum-well lasers

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We investigated the loaded gain and the carrier-induced refractive-index change in quantum-well lasers. A quantum-well laser is found typically to have a higher gain and a smaller refractive-index change than a conventional diode laser. We also found that the gain and the refractive-index change for these two types of semiconductor lasers saturate similarly, with the refractive index being a much weaker function of laser intensity. © 1988, Optical Society of America.
Original languageEnglish
Pages (from-to)303-305
Number of pages3
JournalOptics Letters
Volume13
Issue number4
DOIs
StatePublished - Jan 1 1988
Externally publishedYes

Fingerprint

Dive into the research topics of 'Carrier-induced refractive-index change in quantum-well lasers'. Together they form a unique fingerprint.

Cite this