Abstract
We investigated the loaded gain and the carrier-induced refractive-index change in quantum-well lasers. A quantum-well laser is found typically to have a higher gain and a smaller refractive-index change than a conventional diode laser. We also found that the gain and the refractive-index change for these two types of semiconductor lasers saturate similarly, with the refractive index being a much weaker function of laser intensity. © 1988, Optical Society of America.
| Original language | English |
|---|---|
| Pages (from-to) | 303-305 |
| Number of pages | 3 |
| Journal | Optics Letters |
| Volume | 13 |
| Issue number | 4 |
| DOIs | |
| State | Published - Jan 1 1988 |
| Externally published | Yes |
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