Carrier-population dynamics in group III-nitride quantum well laser structures

W. W. Chow; K. C. Zeng; R. Mair; J. Y. Lin; H. X. Jiang

doi:10.1109/cleo.1998.676171

Carrier-population dynamics in group III-nitride quantum well laser structures

W. W. Chow
, K. C. Zeng
, R. Mair
, J. Y. Lin
, H. X. Jiang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Experiment performed on a 10 period GaN/Al0.07Ga0.93N quantum well structure suggests that the ratio of unconfined to confined band contribution to the photoluminescence varies from 10% to 40% when the pump intensity is increased by an order of magnitude. To understand these processes, the dynamics of carrier transport from the barrier to the well regions was probed using picosecond time-resolved PL spectroscopy at different pumping intensities and temperatures. The spectral data were analyzed, thus determining the time evolution of the carrier distributions.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics Europe - Technical Digest
Pages	282-283
Number of pages	2
DOIs	https://doi.org/10.1109/cleo.1998.676171
State	Published - Jan 1 1998
Externally published	Yes

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10.1109/cleo.1998.676171

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@inproceedings{244b5e1bc3d34bf4bc25c80e73aa4327,

title = "Carrier-population dynamics in group III-nitride quantum well laser structures",

abstract = "Experiment performed on a 10 period GaN/Al0.07Ga0.93N quantum well structure suggests that the ratio of unconfined to confined band contribution to the photoluminescence varies from 10\% to 40\% when the pump intensity is increased by an order of magnitude. To understand these processes, the dynamics of carrier transport from the barrier to the well regions was probed using picosecond time-resolved PL spectroscopy at different pumping intensities and temperatures. The spectral data were analyzed, thus determining the time evolution of the carrier distributions.",

author = "Chow, \{W. W.\} and Zeng, \{K. C.\} and R. Mair and Lin, \{J. Y.\} and Jiang, \{H. X.\}",

year = "1998",

month = jan,

day = "1",

doi = "10.1109/cleo.1998.676171",

language = "English",

pages = "282--283",

booktitle = "Conference on Lasers and Electro-Optics Europe - Technical Digest",

}

TY - GEN

T1 - Carrier-population dynamics in group III-nitride quantum well laser structures

AU - Chow, W. W.

AU - Zeng, K. C.

AU - Mair, R.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Experiment performed on a 10 period GaN/Al0.07Ga0.93N quantum well structure suggests that the ratio of unconfined to confined band contribution to the photoluminescence varies from 10% to 40% when the pump intensity is increased by an order of magnitude. To understand these processes, the dynamics of carrier transport from the barrier to the well regions was probed using picosecond time-resolved PL spectroscopy at different pumping intensities and temperatures. The spectral data were analyzed, thus determining the time evolution of the carrier distributions.

AB - Experiment performed on a 10 period GaN/Al0.07Ga0.93N quantum well structure suggests that the ratio of unconfined to confined band contribution to the photoluminescence varies from 10% to 40% when the pump intensity is increased by an order of magnitude. To understand these processes, the dynamics of carrier transport from the barrier to the well regions was probed using picosecond time-resolved PL spectroscopy at different pumping intensities and temperatures. The spectral data were analyzed, thus determining the time evolution of the carrier distributions.

UR - https://www.scopus.com/pages/publications/0031637772

U2 - 10.1109/cleo.1998.676171

DO - 10.1109/cleo.1998.676171

M3 - Conference contribution

SP - 282

EP - 283

BT - Conference on Lasers and Electro-Optics Europe - Technical Digest

ER -

Carrier-population dynamics in group III-nitride quantum well laser structures

Abstract

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