Cavity structures for low-loss oxide-confined VCSELs

We examine the threshold characteristics of selectively oxidized VCSELs as a function of the number, thickness, and placement of the buried oxide apertures. The threshold current density for small area VCSELs is shown to increase with the number of oxide apertures in the cavity due to increased optical loss, while the threshold current density for broad area VCSELs decreases with increasing number of apertures due to more uniform current injection. Reductions of the threshold gain and optical loss are achieved for small area VCSELs using thin oxide apertures which are displaced longitudinally away from the optical cavity. We show that the optical loss can be sufficiency reduced to allow lasing in VCSELs with aperture area as small as 0.25 micrometer2.