Characterization of Al/GaAs Schottky barriers with thin Si interfacial layers

M. W. Bench; T. J. Miller; M. I. Nathan; C. B. Carter

Characterization of Al/GaAs Schottky barriers with thin Si interfacial layers

M. W. Bench
, T. J. Miller
, M. I. Nathan
, C. B. Carter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In the present study, samples with different Si layer thicknesses (no Si, 6 angstrom Si, and 20 angstrom Si, as determined in situ during growth using reflection high energy electron diffraction (RHEED)) were characterized using transmission electron microscopy (TEM) to determine the nature of the Si layers. It was also found that the presence of the interfacial Si layers affected the growth orientation and morphology of the Al layers.

Original language	English
Title of host publication	Proceedings - Annual Meeting, Microscopy Society of America
Pages	800-801
Number of pages	2
State	Published - Dec 1 1993
Externally published	Yes

Cite this

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title = "Characterization of Al/GaAs Schottky barriers with thin Si interfacial layers",

abstract = "In the present study, samples with different Si layer thicknesses (no Si, 6 angstrom Si, and 20 angstrom Si, as determined in situ during growth using reflection high energy electron diffraction (RHEED)) were characterized using transmission electron microscopy (TEM) to determine the nature of the Si layers. It was also found that the presence of the interfacial Si layers affected the growth orientation and morphology of the Al layers.",

author = "Bench, \{M. W.\} and Miller, \{T. J.\} and Nathan, \{M. I.\} and Carter, \{C. B.\}",

year = "1993",

month = dec,

day = "1",

language = "English",

pages = "800--801",

booktitle = "Proceedings - Annual Meeting, Microscopy Society of America",

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TY - GEN

T1 - Characterization of Al/GaAs Schottky barriers with thin Si interfacial layers

AU - Bench, M. W.

AU - Miller, T. J.

AU - Nathan, M. I.

AU - Carter, C. B.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - In the present study, samples with different Si layer thicknesses (no Si, 6 angstrom Si, and 20 angstrom Si, as determined in situ during growth using reflection high energy electron diffraction (RHEED)) were characterized using transmission electron microscopy (TEM) to determine the nature of the Si layers. It was also found that the presence of the interfacial Si layers affected the growth orientation and morphology of the Al layers.

AB - In the present study, samples with different Si layer thicknesses (no Si, 6 angstrom Si, and 20 angstrom Si, as determined in situ during growth using reflection high energy electron diffraction (RHEED)) were characterized using transmission electron microscopy (TEM) to determine the nature of the Si layers. It was also found that the presence of the interfacial Si layers affected the growth orientation and morphology of the Al layers.

UR - https://www.scopus.com/pages/publications/0027708661

M3 - Conference contribution

SP - 800

EP - 801

BT - Proceedings - Annual Meeting, Microscopy Society of America

ER -

Characterization of Al/GaAs Schottky barriers with thin Si interfacial layers

Abstract

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