Characterization of APB's in GaP

Dov Cohen; Barry C. Carter

Characterization of APB's in GaP

Dov Cohen
, Barry C. Carter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Antiphase boundaries in GaP crystals epitactically grown on Si (001) have been characterized using transmission electron microscopy. Convergent-beam electron diffraction was used to identify the antiphase-related grains. The antiphase boundaries were observed to adopt facets parallel to specific crystallographic orientations. Furthermore, stacking-fault-like contrast was observed along the interface suggesting that the domains may be offset from one another by a rigid-body lattice translation.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Pages	503-508
Number of pages	6
Volume	442
State	Published - Jan 1 1997
Externally published	Yes

Cite this

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title = "Characterization of APB's in GaP",

abstract = "Antiphase boundaries in GaP crystals epitactically grown on Si (001) have been characterized using transmission electron microscopy. Convergent-beam electron diffraction was used to identify the antiphase-related grains. The antiphase boundaries were observed to adopt facets parallel to specific crystallographic orientations. Furthermore, stacking-fault-like contrast was observed along the interface suggesting that the domains may be offset from one another by a rigid-body lattice translation.",

author = "Dov Cohen and Carter, \{Barry C.\}",

year = "1997",

month = jan,

day = "1",

language = "English",

volume = "442",

pages = "503--508",

booktitle = "Materials Research Society Symposium - Proceedings",

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TY - GEN

T1 - Characterization of APB's in GaP

AU - Cohen, Dov

AU - Carter, Barry C.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Antiphase boundaries in GaP crystals epitactically grown on Si (001) have been characterized using transmission electron microscopy. Convergent-beam electron diffraction was used to identify the antiphase-related grains. The antiphase boundaries were observed to adopt facets parallel to specific crystallographic orientations. Furthermore, stacking-fault-like contrast was observed along the interface suggesting that the domains may be offset from one another by a rigid-body lattice translation.

AB - Antiphase boundaries in GaP crystals epitactically grown on Si (001) have been characterized using transmission electron microscopy. Convergent-beam electron diffraction was used to identify the antiphase-related grains. The antiphase boundaries were observed to adopt facets parallel to specific crystallographic orientations. Furthermore, stacking-fault-like contrast was observed along the interface suggesting that the domains may be offset from one another by a rigid-body lattice translation.

UR - https://www.scopus.com/pages/publications/0030674892

M3 - Conference contribution

VL - 442

SP - 503

EP - 508

BT - Materials Research Society Symposium - Proceedings

ER -

Characterization of APB's in GaP

Abstract

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