Characterization of MBE-grown 1.55-μm GaSb-based multiple-quantum-well lasers at cryogenic temperatures

Troy Hutchins-Delgado; Sami Adnan Nazib; Hosuk Lee; Diana Magana Contreras; Estania Jean Charles; Nathan J. Withers; Sadhvikas J. Addamane; Emma J. Renteria; John Nogan; Ganesh Balakrishnan; Marek Osiński

doi:10.1117/12.2515649

Characterization of MBE-grown 1.55-μm GaSb-based multiple-quantum-well lasers at cryogenic temperatures

Troy Hutchins-Delgado
, Sami Adnan Nazib
, Hosuk Lee
, Diana Magana Contreras
, Estania Jean Charles
, Nathan J. Withers
, Sadhvikas J. Addamane
, Emma J. Renteria
, John Nogan
, Ganesh Balakrishnan
, Marek Osiński

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaSb-based multiple-quantum-well lasers with In0.2Ga0.8Sb wells, Al0.35Ga0.65Sb barriers, and Al0.9Ga0.1Sb claddings have been fabricated as broad-area Fabry-Perot devices of dimensions 1000 μm × 800 μm. Their current-voltage and light-current characteristics, as well as emission spectra have been measured over a wide temperature range from 280 K down to 20 K. These data have been analyzed for experimental information on carrier freeze out, gain changes related to temperature, temperature-dependence of series resistance, and prospects for high-performance lasers operating at cryogenic temperatures.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10912
DOIs	https://doi.org/10.1117/12.2515649
State	Published - Jan 1 2019
Externally published	Yes

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Hutchins-Delgado, T., Nazib, S. A., Lee, H., Magana Contreras, D., Jean Charles, E., Withers, N. J., Addamane, S. J., Renteria, E. J., Nogan, J., Balakrishnan, G., & Osiński, M. (2019). Characterization of MBE-grown 1.55-μm GaSb-based multiple-quantum-well lasers at cryogenic temperatures. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 10912) https://doi.org/10.1117/12.2515649

@inproceedings{5f129c756f65455cb3be2bc9286b7591,

title = "Characterization of MBE-grown 1.55-μm GaSb-based multiple-quantum-well lasers at cryogenic temperatures",

abstract = "GaSb-based multiple-quantum-well lasers with In0.2Ga0.8Sb wells, Al0.35Ga0.65Sb barriers, and Al0.9Ga0.1Sb claddings have been fabricated as broad-area Fabry-Perot devices of dimensions 1000 μm × 800 μm. Their current-voltage and light-current characteristics, as well as emission spectra have been measured over a wide temperature range from 280 K down to 20 K. These data have been analyzed for experimental information on carrier freeze out, gain changes related to temperature, temperature-dependence of series resistance, and prospects for high-performance lasers operating at cryogenic temperatures.",

author = "Troy Hutchins-Delgado and Nazib, \{Sami Adnan\} and Hosuk Lee and \{Magana Contreras\}, Diana and \{Jean Charles\}, Estania and Withers, \{Nathan J.\} and Addamane, \{Sadhvikas J.\} and Renteria, \{Emma J.\} and John Nogan and Ganesh Balakrishnan and Marek Osi{\'n}ski",

year = "2019",

month = jan,

day = "1",

doi = "10.1117/12.2515649",

language = "English",

isbn = "9781510624665",

volume = "10912",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

Hutchins-Delgado, T, Nazib, SA, Lee, H, Magana Contreras, D, Jean Charles, E, Withers, NJ, Addamane, SJ, Renteria, EJ, Nogan, J, Balakrishnan, G & Osiński, M 2019, Characterization of MBE-grown 1.55-μm GaSb-based multiple-quantum-well lasers at cryogenic temperatures. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 10912. https://doi.org/10.1117/12.2515649

TY - GEN

T1 - Characterization of MBE-grown 1.55-μm GaSb-based multiple-quantum-well lasers at cryogenic temperatures

AU - Hutchins-Delgado, Troy

AU - Nazib, Sami Adnan

AU - Lee, Hosuk

AU - Magana Contreras, Diana

AU - Jean Charles, Estania

AU - Withers, Nathan J.

AU - Addamane, Sadhvikas J.

AU - Renteria, Emma J.

AU - Nogan, John

AU - Balakrishnan, Ganesh

AU - Osiński, Marek

PY - 2019/1/1

Y1 - 2019/1/1

N2 - GaSb-based multiple-quantum-well lasers with In0.2Ga0.8Sb wells, Al0.35Ga0.65Sb barriers, and Al0.9Ga0.1Sb claddings have been fabricated as broad-area Fabry-Perot devices of dimensions 1000 μm × 800 μm. Their current-voltage and light-current characteristics, as well as emission spectra have been measured over a wide temperature range from 280 K down to 20 K. These data have been analyzed for experimental information on carrier freeze out, gain changes related to temperature, temperature-dependence of series resistance, and prospects for high-performance lasers operating at cryogenic temperatures.

AB - GaSb-based multiple-quantum-well lasers with In0.2Ga0.8Sb wells, Al0.35Ga0.65Sb barriers, and Al0.9Ga0.1Sb claddings have been fabricated as broad-area Fabry-Perot devices of dimensions 1000 μm × 800 μm. Their current-voltage and light-current characteristics, as well as emission spectra have been measured over a wide temperature range from 280 K down to 20 K. These data have been analyzed for experimental information on carrier freeze out, gain changes related to temperature, temperature-dependence of series resistance, and prospects for high-performance lasers operating at cryogenic temperatures.

UR - https://www.scopus.com/pages/publications/85065781750

U2 - 10.1117/12.2515649

DO - 10.1117/12.2515649

M3 - Conference contribution

SN - 9781510624665

VL - 10912

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Characterization of MBE-grown 1.55-μm GaSb-based multiple-quantum-well lasers at cryogenic temperatures

Abstract

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