Abstract
The article presents a study on the thin films of NiO deposited on single crystal alpha Al2O3 substrates before and after pulsed laser ablation. Transmission electron microscopy is used to study the oxide film growth. Cross section specimens and high resolution backscattered electron imaging in FESEM is utilized to analyze solid state reactions between the thin film and the single crystal substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 1120-1121 |
| Number of pages | 2 |
| Journal | Proceedings - Annual Meeting, Microscopy Society of America |
| State | Published - 1993 |
| Externally published | Yes |
| Event | Proceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA Duration: Aug 1 1993 → Aug 6 1993 |
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