Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers

J. Hader; D. Bossert; J. Stohs; W. W. Chow; S. W. Koch; J. V. Moloney

doi:10.1063/1.123823

Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers

J. Hader
, D. Bossert
, J. Stohs
, W. W. Chow
, S. W. Koch
, J. V. Moloney

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

The linewidth enhancement factor (LWEF) in single quantum-well lasers is analyzed theoretically and experimentally. The LWEF clamps with increasing carrier density and the correct LWEF at the gain peak is affected by the density dependence of the gain maximum. Calculations show that designing laser structures is possible, wherein the LWEF does not have to increase with increasing pump level.

Original language	English
Pages (from-to)	2277-2279
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	16
DOIs	https://doi.org/10.1063/1.123823
State	Published - Apr 19 1999
Externally published	Yes

Access to Document

10.1063/1.123823

Cite this

@article{69f06da6fb1e4adda6e749c907efa4fe,

title = "Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers",

abstract = "The linewidth enhancement factor (LWEF) in single quantum-well lasers is analyzed theoretically and experimentally. The LWEF clamps with increasing carrier density and the correct LWEF at the gain peak is affected by the density dependence of the gain maximum. Calculations show that designing laser structures is possible, wherein the LWEF does not have to increase with increasing pump level.",

author = "J. Hader and D. Bossert and J. Stohs and Chow, \{W. W.\} and Koch, \{S. W.\} and Moloney, \{J. V.\}",

year = "1999",

month = apr,

day = "19",

doi = "10.1063/1.123823",

language = "English",

volume = "74",

pages = "2277--2279",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers

AU - Hader, J.

AU - Bossert, D.

AU - Stohs, J.

AU - Chow, W. W.

AU - Koch, S. W.

AU - Moloney, J. V.

PY - 1999/4/19

Y1 - 1999/4/19

N2 - The linewidth enhancement factor (LWEF) in single quantum-well lasers is analyzed theoretically and experimentally. The LWEF clamps with increasing carrier density and the correct LWEF at the gain peak is affected by the density dependence of the gain maximum. Calculations show that designing laser structures is possible, wherein the LWEF does not have to increase with increasing pump level.

AB - The linewidth enhancement factor (LWEF) in single quantum-well lasers is analyzed theoretically and experimentally. The LWEF clamps with increasing carrier density and the correct LWEF at the gain peak is affected by the density dependence of the gain maximum. Calculations show that designing laser structures is possible, wherein the LWEF does not have to increase with increasing pump level.

UR - https://www.scopus.com/pages/publications/0032614962

U2 - 10.1063/1.123823

DO - 10.1063/1.123823

M3 - Article

SN - 0003-6951

VL - 74

SP - 2277

EP - 2279

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers

Abstract

Access to Document

Fingerprint

Cite this