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Coherent terahertz emission from cavity polaritons in semiconductor microcavities

  • R. Harel
  • , I. Brener
  • , L. N. Pfeiffer
  • , K. West
  • , J. M. Vandenberg
  • , S. N.G. Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The coherent THz emission from cavity polaritons in a semiconductor microcavity, which consists of three 108 angstroms/102 angstroms GaAs/AlAs quantum wells, was examined. The sample exhibited a Rabi splitting of 5.7 meV at normal incidence at T = 4 K. The spectral sample design and large Rabi splitting made the observation of cavity polaritons from 4 K up to room temperature possible. A short laser pulse excited the sample with an incident photon density of <6·1010 photons/cm2, which is much smaller than the saturation density of the cavity polariton doublet. Three measurements were carried out simultaneously: coherent THz detection; time-resolved upconversion of the reflected beam; and spectral analysis of the reflection.
Original languageEnglish
Title of host publicationIQEC, International Quantum Electronics Conference Proceedings
Pages218
Number of pages1
StatePublished - Jan 1 1999
Externally publishedYes

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