Comparative study of stimulated emission in GaN, Al<inf>x</inf>Ga<inf>1-x</inf>N, and In<inf>x</inf>Ga<inf>1-x</inf>N

D. Wiesmann; I. Brener; M. A. Khan

Comparative study of stimulated emission in GaN, Al<inf>x</inf>Ga<inf>1-x</inf>N, and In<inf>x</inf>Ga<inf>1-x</inf>N

D. Wiesmann
, I. Brener
, M. A. Khan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaN and related alloys InGaN and AlGaN are very promising materials for the realization of a laser diode emitting in the blue to near-UV spectral range. In this work, an attempt has been made to measure the stimulated emission for different InGaN samples and compare the determined threshold with those for GaN and AlGaN samples. Results show that InGaAn samples exhibit lower threshold for stimulated emission and a different temperature dependence than in GaN and AlGaN.

Original language	English
Title of host publication	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages	455-456
Number of pages	2
State	Published - Jan 1 1996
Externally published	Yes

Cite this

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title = "Comparative study of stimulated emission in GaN, AlxGa1-xN, and InxGa1-xN",

abstract = "GaN and related alloys InGaN and AlGaN are very promising materials for the realization of a laser diode emitting in the blue to near-UV spectral range. In this work, an attempt has been made to measure the stimulated emission for different InGaN samples and compare the determined threshold with those for GaN and AlGaN samples. Results show that InGaAn samples exhibit lower threshold for stimulated emission and a different temperature dependence than in GaN and AlGaN.",

author = "D. Wiesmann and I. Brener and Khan, \{M. A.\}",

year = "1996",

month = jan,

day = "1",

language = "English",

pages = "455--456",

booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

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TY - GEN

T1 - Comparative study of stimulated emission in GaN, AlxGa1-xN, and InxGa1-xN

AU - Wiesmann, D.

AU - Brener, I.

AU - Khan, M. A.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - GaN and related alloys InGaN and AlGaN are very promising materials for the realization of a laser diode emitting in the blue to near-UV spectral range. In this work, an attempt has been made to measure the stimulated emission for different InGaN samples and compare the determined threshold with those for GaN and AlGaN samples. Results show that InGaAn samples exhibit lower threshold for stimulated emission and a different temperature dependence than in GaN and AlGaN.

AB - GaN and related alloys InGaN and AlGaN are very promising materials for the realization of a laser diode emitting in the blue to near-UV spectral range. In this work, an attempt has been made to measure the stimulated emission for different InGaN samples and compare the determined threshold with those for GaN and AlGaN samples. Results show that InGaAn samples exhibit lower threshold for stimulated emission and a different temperature dependence than in GaN and AlGaN.

UR - https://www.scopus.com/pages/publications/0029705790

M3 - Conference contribution

SP - 455

EP - 456

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

ER -

Comparative study of stimulated emission in GaN, Al<inf>x</inf>Ga<inf>1-x</inf>N, and In<inf>x</inf>Ga<inf>1-x</inf>N

Abstract

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