Comparison between experimental and simulation results for ion beam and neutron irradiations in silicon bipolar junction transistors

E. Bielejec; G. Vizkelethy; R. M. Fleming; W. R. Wampler; S. M. Myers; D. B. King

doi:10.1109/TNS.2008.2007561

Comparison between experimental and simulation results for ion beam and neutron irradiations in silicon bipolar junction transistors

E. Bielejec
, G. Vizkelethy
, R. M. Fleming
, W. R. Wampler
, S. M. Myers
, D. B. King

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

We report on an early-time inverse gain comparison between ion and neutron irradiated silicon bipolar junction transistors. We find ion irradiations to be an excellent simulator for fast-burst neutrons for early-time behavior and damage creation rates. In addition we report on an experimental to simulation comparison of transient gain annealing response. The simulations are from a physics based modeling approach that is being developed at Sandia National Laboratories as part of the Qualification Alternatives to the Sandia Pulsed Reactor (QASPR) Program. We find excellent agreement between simulation and experiment across a wide range of irradiation conditions. © 2006 IEEE.

Original language	English
Title of host publication	IEEE Transactions on Nuclear Science
Pages	3055-3059
Number of pages	5
Volume	55
Edition	6
DOIs	https://doi.org/10.1109/TNS.2008.2007561
State	Published - Dec 1 2008
Externally published	Yes

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10.1109/TNS.2008.2007561

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title = "Comparison between experimental and simulation results for ion beam and neutron irradiations in silicon bipolar junction transistors",

abstract = "We report on an early-time inverse gain comparison between ion and neutron irradiated silicon bipolar junction transistors. We find ion irradiations to be an excellent simulator for fast-burst neutrons for early-time behavior and damage creation rates. In addition we report on an experimental to simulation comparison of transient gain annealing response. The simulations are from a physics based modeling approach that is being developed at Sandia National Laboratories as part of the Qualification Alternatives to the Sandia Pulsed Reactor (QASPR) Program. We find excellent agreement between simulation and experiment across a wide range of irradiation conditions. {\textcopyright} 2006 IEEE.",

author = "E. Bielejec and G. Vizkelethy and Fleming, \{R. M.\} and Wampler, \{W. R.\} and Myers, \{S. M.\} and King, \{D. B.\}",

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doi = "10.1109/TNS.2008.2007561",

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T1 - Comparison between experimental and simulation results for ion beam and neutron irradiations in silicon bipolar junction transistors

AU - Bielejec, E.

AU - Vizkelethy, G.

AU - Fleming, R. M.

AU - Wampler, W. R.

AU - Myers, S. M.

AU - King, D. B.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We report on an early-time inverse gain comparison between ion and neutron irradiated silicon bipolar junction transistors. We find ion irradiations to be an excellent simulator for fast-burst neutrons for early-time behavior and damage creation rates. In addition we report on an experimental to simulation comparison of transient gain annealing response. The simulations are from a physics based modeling approach that is being developed at Sandia National Laboratories as part of the Qualification Alternatives to the Sandia Pulsed Reactor (QASPR) Program. We find excellent agreement between simulation and experiment across a wide range of irradiation conditions. © 2006 IEEE.

AB - We report on an early-time inverse gain comparison between ion and neutron irradiated silicon bipolar junction transistors. We find ion irradiations to be an excellent simulator for fast-burst neutrons for early-time behavior and damage creation rates. In addition we report on an experimental to simulation comparison of transient gain annealing response. The simulations are from a physics based modeling approach that is being developed at Sandia National Laboratories as part of the Qualification Alternatives to the Sandia Pulsed Reactor (QASPR) Program. We find excellent agreement between simulation and experiment across a wide range of irradiation conditions. © 2006 IEEE.

UR - https://www.scopus.com/pages/publications/58849108233

U2 - 10.1109/TNS.2008.2007561

DO - 10.1109/TNS.2008.2007561

M3 - Conference contribution

VL - 55

SP - 3055

EP - 3059

BT - IEEE Transactions on Nuclear Science

ER -

Comparison between experimental and simulation results for ion beam and neutron irradiations in silicon bipolar junction transistors

Abstract

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