Concentration profiling of nitrogen in steel and amorphous silicon by 15N(p,αγ)12C nuclear reaction analysis

Liao Changgeng; Wang Yongqiang; Xiang Jinzhong; Ma Zhihui; Zheng Zhihao

doi:10.1016/0042-207X(89)90174-7

Concentration profiling of nitrogen in steel and amorphous silicon by ¹⁵N(p,αγ)¹²C nuclear reaction analysis

Liao Changgeng
, Wang Yongqiang
, Xiang Jinzhong
, Ma Zhihui
, Zheng Zhihao

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The depth profiles of nitrogen in the surface of nitrided steel and amorphous silicon wafers have been measured by using the 429 keV resonance of the ¹⁵N(p, αγ)¹²C nuclear reaction. The surface nitrogen contamination of amorphous silicon wafers can be clearly detected. The detection limit for nitrided steel is 0.03 wt% at optimum conditions.

Original language	English
Pages (from-to)	119-120
Number of pages	2
Journal	Vacuum
Volume	39
Issue number	2-4
DOIs	https://doi.org/10.1016/0042-207X(89)90174-7
State	Published - 1989
Externally published	Yes

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10.1016/0042-207X(89)90174-7

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@article{1b9e31b008de4b23933b91b3c59ac959,

title = "Concentration profiling of nitrogen in steel and amorphous silicon by 15N(p,αγ)12C nuclear reaction analysis",

abstract = "The depth profiles of nitrogen in the surface of nitrided steel and amorphous silicon wafers have been measured by using the 429 keV resonance of the 15N(p, αγ)12C nuclear reaction. The surface nitrogen contamination of amorphous silicon wafers can be clearly detected. The detection limit for nitrided steel is 0.03 wt\% at optimum conditions.",

author = "Liao Changgeng and Wang Yongqiang and Xiang Jinzhong and Ma Zhihui and Zheng Zhihao",

year = "1989",

doi = "10.1016/0042-207X(89)90174-7",

language = "English",

volume = "39",

pages = "119--120",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd.",

number = "2-4",

}

TY - JOUR

T1 - Concentration profiling of nitrogen in steel and amorphous silicon by 15N(p,αγ)12C nuclear reaction analysis

AU - Changgeng, Liao

AU - Yongqiang, Wang

AU - Jinzhong, Xiang

AU - Zhihui, Ma

AU - Zhihao, Zheng

PY - 1989

Y1 - 1989

N2 - The depth profiles of nitrogen in the surface of nitrided steel and amorphous silicon wafers have been measured by using the 429 keV resonance of the 15N(p, αγ)12C nuclear reaction. The surface nitrogen contamination of amorphous silicon wafers can be clearly detected. The detection limit for nitrided steel is 0.03 wt% at optimum conditions.

AB - The depth profiles of nitrogen in the surface of nitrided steel and amorphous silicon wafers have been measured by using the 429 keV resonance of the 15N(p, αγ)12C nuclear reaction. The surface nitrogen contamination of amorphous silicon wafers can be clearly detected. The detection limit for nitrided steel is 0.03 wt% at optimum conditions.

UR - https://www.scopus.com/pages/publications/0024889471

U2 - 10.1016/0042-207X(89)90174-7

DO - 10.1016/0042-207X(89)90174-7

M3 - Article

SN - 0042-207X

VL - 39

SP - 119

EP - 120

JO - Vacuum

JF - Vacuum

IS - 2-4

ER -

Concentration profiling of nitrogen in steel and amorphous silicon by 15N(p,αγ)12C nuclear reaction analysis

Abstract

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Concentration profiling of nitrogen in steel and amorphous silicon by ¹⁵N(p,αγ)¹²C nuclear reaction analysis