Continuous Tuning of Gain Peak Linewidth Enhancement Factor from Negative to Positive with p Doping in InAs QD Laser on Si

Zeyu Zhang; Daehwan Jung; Justin C. Norman; Pari Patel; Weng W. Chow; John E. Bowers

doi:10.1109/ISLC.2018.8516259

Continuous Tuning of Gain Peak Linewidth Enhancement Factor from Negative to Positive with p Doping in InAs QD Laser on Si

Zeyu Zhang
, Daehwan Jung
, Justin C. Norman
, Pari Patel
, Weng W. Chow
, John E. Bowers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

We investigate the linewidth enhancement factor of 1.3 μm quantum dot lasers epitaxially grown on silicon. Both the calculation and experiment show small (<1) linewidth enhancement factor at gain peak due to high dot uniformity. By varying the modulation p doping level, the linewidth enhancement factor at threshold can be continuously changed across zero from negative to positive.

Original language	English
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Pages	247-248
Number of pages	2
Volume	2018-September
DOIs	https://doi.org/10.1109/ISLC.2018.8516259
State	Published - Oct 30 2018
Externally published	Yes

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10.1109/ISLC.2018.8516259

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title = "Continuous Tuning of Gain Peak Linewidth Enhancement Factor from Negative to Positive with p Doping in InAs QD Laser on Si",

abstract = "We investigate the linewidth enhancement factor of 1.3 μm quantum dot lasers epitaxially grown on silicon. Both the calculation and experiment show small (<1) linewidth enhancement factor at gain peak due to high dot uniformity. By varying the modulation p doping level, the linewidth enhancement factor at threshold can be continuously changed across zero from negative to positive.",

author = "Zeyu Zhang and Daehwan Jung and Norman, \{Justin C.\} and Pari Patel and Chow, \{Weng W.\} and Bowers, \{John E.\}",

year = "2018",

month = oct,

day = "30",

doi = "10.1109/ISLC.2018.8516259",

language = "English",

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volume = "2018-September",

pages = "247--248",

booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

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Continuous Tuning of Gain Peak Linewidth Enhancement Factor from Negative to Positive with p Doping in InAs QD Laser on Si. / Zhang, Zeyu; Jung, Daehwan; Norman, Justin C. et al.
Conference Digest - IEEE International Semiconductor Laser Conference. Vol. 2018-September 2018. p. 247-248.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Continuous Tuning of Gain Peak Linewidth Enhancement Factor from Negative to Positive with p Doping in InAs QD Laser on Si

AU - Zhang, Zeyu

AU - Jung, Daehwan

AU - Norman, Justin C.

AU - Patel, Pari

AU - Chow, Weng W.

AU - Bowers, John E.

PY - 2018/10/30

Y1 - 2018/10/30

N2 - We investigate the linewidth enhancement factor of 1.3 μm quantum dot lasers epitaxially grown on silicon. Both the calculation and experiment show small (<1) linewidth enhancement factor at gain peak due to high dot uniformity. By varying the modulation p doping level, the linewidth enhancement factor at threshold can be continuously changed across zero from negative to positive.

AB - We investigate the linewidth enhancement factor of 1.3 μm quantum dot lasers epitaxially grown on silicon. Both the calculation and experiment show small (<1) linewidth enhancement factor at gain peak due to high dot uniformity. By varying the modulation p doping level, the linewidth enhancement factor at threshold can be continuously changed across zero from negative to positive.

UR - https://www.scopus.com/pages/publications/85057424984

U2 - 10.1109/ISLC.2018.8516259

DO - 10.1109/ISLC.2018.8516259

M3 - Conference contribution

SN - 9781538664865

VL - 2018-September

SP - 247

EP - 248

BT - Conference Digest - IEEE International Semiconductor Laser Conference

ER -

Continuous Tuning of Gain Peak Linewidth Enhancement Factor from Negative to Positive with p Doping in InAs QD Laser on Si

Abstract

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