Abstract
Reflection electron microscopy (REM) is shown to be applicable to the testing of the quality of AlxGa1−xAs/GaAs layer structures. Cross‐sectional images of quantum well structures with layer thickness down to 1 nm can be obtained. The practical aspects of the REM technique are presented. The most important advantages and drawbacks of cross‐sectional REM are discussed in detail. Copyright © 1985 Wiley‐Liss, Inc.
| Original language | English |
|---|---|
| Pages (from-to) | 533-546 |
| Number of pages | 14 |
| Journal | Journal of Electron Microscopy Technique |
| Volume | 2 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jan 1 1985 |
| Externally published | Yes |
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